Active matrix substrate and display device including the same

ABSTRACT

A layout pattern of a demultiplexer circuit of a display device employing the SSD method is configured as described below. Specifically, demultiplexers in the demultiplexer circuit are grouped with three demultiplexers as one set, and nine transistors as switching elements included in the three demultiplexers of each set are arranged to be aligned in the extending direction of a source line with three transistors as a unit while positions of the nine transistors are sequentially shifted in the vertical direction with respect to the source line. Furthermore, any two adjacent sets are arranged such that a direction in which nine transistors included in one set are shifted in the vertical direction with three transistors as a unit and a direction in which nine transistors in the other set are shifted in the above-described vertical direction with three transistors as a unit are opposite to each other.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese PatentApplication Number 2020-119380 filed on Jul. 10, 2020. The entirecontents of the above-identified application are hereby incorporated byreference.

BACKGROUND Technical Field

The present disclosure relates to an active matrix substrate and adisplay device including the same, and more particularly to an activematrix substrate including a circuit that controls supply of videosignals to data signal lines such as a demultiplexer that demultiplexestime-division multiplexed video signals and supplies demultiplexed videosignals to two or more data signal lines, and a display device includingthe same.

In display devices such as an active matrix liquid crystal displaydevice, an active matrix substrate is used, the active matrix substratebeing formed with a plurality of data signal lines (also referred to as“source lines”), a plurality of scanning signal lines (also referred toas “gate lines”) intersecting the plurality of data signal lines, and aplurality of pixel circuits arranged in a matrix along the plurality ofdata signal lines and the plurality of scanning signal lines. In suchdisplay devices, some devices employ a method (hereinafter referred toas “Source Shared Driving (SSD) method” in which a plurality of datasignal lines in an active matrix substrate is grouped into a pluralityof groups of data signal lines with two or more data signal lines as onegroup, and data signals are supplied to the two or more data signallines in each group in a time-multiplexed manner.

In the SSD method, a demultiplexer circuit including a plurality ofdemultiplexers respectively corresponding to the plurality of groups isused, and the demultiplexer circuit is typically formed on the activematrix substrate together with the plurality of pixel circuits. A dataside drive circuit outputs a plurality of data signals (also referred toas “multiplexed data signals”), each of which is a time-divisionmultiplexed video signal, to the plurality of demultiplexers. Eachdemultiplexer includes two or more switching elements each connected tothe two or more data signal lines of a corresponding group. An analogvoltage as each data signal from the data side drive circuit is suppliedto either of the two or more data signal lines via a switching elementin the on state among two or more switching elements in a correspondingdemultiplexer, and a switching element to be in the on state in eachdemultiplexer is switched sequentially. When the switching elementconnected to the data signal line in the corresponding demultiplexer isin the on state, each data signal line is supplied with a data signalvia a switching element and then, when the switching element changes tothe off state, the analog voltage as the data signal is held in a wiringline capacitance of the data signal line. By activating (selecting) anyof the plurality of scanning signal lines in a state in which the analogvoltage as the data signal is held in each data signal line in theabove-described manner, the voltage of the data signal line is writtenas pixel data to a pixel circuit connected to the activated scanningsignal line.

In a case where the SSD method described above is employed in a displaydevice having a narrow pixel pitch such as a head-mounted display(hereinafter abbreviated as “HDM”), transistors constituting theplurality of demultiplexers sometimes cannot be arranged in the verticaldirection with respect to the data signal line on the active matrixsubstrate. In this case, a configuration in which each of two or moretransistors constituting the plurality of demultiplexers is grouped, andthe two or more transistors constituting each group are arranged to bealigned in the extending direction of the data signal line while beingsequentially shifted in the vertical direction with respect to the datasignal line, in other words, a configuration (hereinafter referred to asa “diagonal arrangement configuration”) in which a plurality oftransistors constituting one group is arranged to be aligned in adiagonal direction with respect to the data signal line is employed.

For example, in a demultiplexer circuit in the display device accordingto the first embodiment described in WO 2014/112459, a demultiplexer fordistributing a video signal of the n-th signal input line Vn to threedata signal lines SLRn, SLGn, and SLBn is constituted by transistors13R2, 13G2, and 13B1 as illustrated in FIG. 3 of the document, and thetransistors 13R2, 13G2, and 13B1 are arranged to be aligned in theextending direction of data lines SLRn, SLGn, and SLBn while positionsof the transistors 13R2, 13G2, and 13B1 are shifted in the verticaldirection with respect to the data lines SLRn, SLGn, and SLBn. Inaddition, transistors constituting a demultiplexer for distributing avideo signal of the (n+1)-th signal input line Vn+1 to three data signallines SLRn+1, SLGn+1, and SLBn+1 are arranged in the same manner. Thus,in the demultiplexer circuit in the display device according to thefirst embodiment described in WO 2014/112459, transistors constitutingthe demultiplexer are grouped into each of three transistors (forconstituting one demultiplexer), and the three transistors constitutingeach group are arranged to be aligned in the extending direction of thedata signal line while the being sequentially shifted in the verticaldirection with respect to the data signal line (however, in thisexample, two of the three transistors are arranged in the verticaldirection with respect to the data line).

SUMMARY

In a display device employing the SSD method, in a case where theabove-described diagonal arrangement configuration is employed for thetransistors as the switching elements constituting the demultiplexercircuit, there occurs a portion in which data signal lines havinglengths largely different from each other are adjacent to each other. Ina case where such adjacent data signal lines are driven, a differenceoccurs in the degree of charge between a pixel capacitance connected toone of the adjacent data signal lines and a pixel capacitance connectedto the other according to the difference in the lengths of the adjacentdata signal lines (details will be described later). As a result, forexample, in a case where monochrome display is to be performed withuniform gray scale, striped unevenness may be visually recognized in adisplay screen in the adjacent portion of the adjacent data signallines.

Thus, it is desirable to prevent the striped unevenness from beingvisually recognized, even in a case where the transistors as theswitching elements for controlling the supply of the video signals (datasignals) to the data signal lines such as the switching elements of thedemultiplexer circuit cannot be arranged in the vertical direction withrespect to the data signal line due to the narrow pixel pitch.

(1) An active matrix substrate according to some embodiments of thepresent disclosure is an active matrix substrate including a displayportion formed with a plurality of pixel circuits, the active matrixsubstrate comprising: a plurality of data signal lines configured totransmit a plurality of video signals representing an image to bedisplayed on the display portion to the plurality of pixel circuits; anda signal supply control circuit including a plurality of connectioncontrol switching elements respectively corresponding to the pluralityof data signal lines and configured to supply each of the plurality ofvideo signals to be applied to each of the plurality of data signallines to each of the plurality of data signal lines via correspondingeach of the plurality of connection control switching elements, whereinin the signal supply control circuit, the plurality of connectioncontrol switching elements is grouped into a plurality of sets ofswitching element group with two or more switching elements as one set,the switching element group of each of the plurality of sets is arrangedto be aligned in an extending direction of the plurality of data signallines with a predetermined number of the switching elements as a unitwhile a position of the switching element group of each of the pluralityof sets is sequentially shifted in the vertical direction with respectto the plurality of data signal lines, and in any two adjacent sets, adirection in which a position of the switching element group of one setis shifted in the vertical direction with the predetermined number ofswitching elements as the unit and a direction in which a position ofthe switching element group of another set is shifted in the verticaldirection with the predetermined number of switching elements as theunit is opposite to each other.

(2) The active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (1), wherein thesignal supply control circuit is a demultiplexer circuit including aplurality of demultiplexers respectively corresponding to a plurality ofgroups of data signal lines obtained by grouping the plurality of datasignal lines with two or more data signal lines as one group andincluding a plurality of input terminals respectively corresponding tothe plurality of demultiplexers, the demultiplexer circuit receives, ateach of the plurality of input terminals, multiplexed data in which twoor more data signals that are video signals to be supplied to the two ormore data signal lines in a group corresponding to each of the pluralityof demultiplexers corresponding to each of the plurality of inputterminals is time-division multiplexed, each of the plurality ofdemultiplexers includes two or more connection control switchingelements respectively corresponding to the two or more data signal linesin the group corresponding to each of the plurality of demultiplexer,and is configured to supply two or more data signals obtained bydemultiplexing the multiplexed data signals to be supplied to the inputterminals corresponding to the demultiplexer by the two or moreconnection control switching elements to the two or more data signallines, respectively,

in the demultiplexer circuit,the plurality of demultiplexers is grouped into a plurality of sets witha predetermined number of demultiplexers as one set, the connectioncontrol switching elements included in the predetermined number ofdemultiplexers in each of the plurality of sets are arranged to bealigned in an extending direction of the plurality of data signal lineswith the predetermined number of switching elements as a unit whilepositions of the connection control switching elements included in thepredetermined number of demultiplexers in each of the plurality of setsare sequentially shifted in the vertical direction with respect to theplurality of data signal lines, and in any two adjacent sets, adirection in which positions of the connection control switchingelements included in the predetermined number of demultiplexers of oneset are shifted in the vertical direction with the predetermined numberof switching elements as the unit and a direction in which positions ofthe connection control switching elements included in the predeterminednumber of demultiplexers of another set are shifted in the verticaldirection with the predetermined number of switching elements as theunit is opposite to each other.

(3) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (2), wherein inthe demultiplexer circuit, the connection control switching elementsincluded in the predetermined number of the demultiplexers of each ofthe plurality of sets are arranged to be aligned in the extendingdirection of the plurality of data signal lines with the connectioncontrol switching elements included in one demultiplexer as a unit whilepositions of the connection control switching elements included in thepredetermined number of the demultiplexers of each of the plurality ofsets are sequentially shifted in the vertical direction with respect tothe plurality of data signal lines.

(4) The active matrix substrate according to some embodiments of thepresent disclosure includes the above-described configuration (2) or(3), wherein each connection control switching element in each of theplurality of demultiplexers is constituted by either only one of anN-channel transistor or a P-channel transistor.

(5) The active matrix substrate according to some embodiments of thepresent disclosure includes the above-described configuration (2) or(3), wherein each connection control switching element in each of theplurality of demultiplexers is constituted by an N-channel transistorand a P-channel transistor connected in parallel with each other.

(6) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (5), wherein theN-channel transistor and the P-channel transistor constituting eachconnection control switching element in each of the plurality ofdemultiplexers are arranged to be aligned in the extending direction ofthe plurality of data signal lines.

(7) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (5), wherein theN-channel transistor and the P-channel transistor constituting eachconnection control switching element in each of the plurality ofdemultiplexers are arranged to be aligned in the vertical direction withrespect to the plurality of data signal lines.

(8) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (2), wherein inthe demultiplexer circuit, two or more control signal lines are arrangedas control signal lines transmitting a plurality of types of controlsignals required for controlling each connection control switchingelement included in each of the plurality of demultiplexers to each ofthe plurality of demultiplexers, for each of the plurality of types ofcontrol signals.

(9) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (8), wherein

in the demultiplexer circuit, a set in which the connection controlswitching elements are arranged such that positions of the connectioncontrol switching elements included in the predetermined number ofdemultiplexers of the one set are shifted in the vertical direction inthe same direction as a direction in which the connection controlswitching elements are shifted in the vertical direction with thepredetermined number of switching elements as a unit is equallyconnected to the two or more control signal lines arranged for each ofthe plurality of types of control signals, anda set in which the connection control switching elements are arrangedsuch that positions of the connection control switching elementsincluded in the predetermined number of demultiplexers of the other setare shifted in the vertical direction in the same direction as adirection in which the connection control switching elements are shiftedin the vertical direction with the predetermined number of switchingelements as a unit is equally connected to the two or more controlsignal lines arranged for each of the plurality of types of controlsignals.

(10) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (2), wherein

the connection control switching elements included in each of theplurality of demultiplexers are thin film transistors, and in thedemultiplexer circuit, for each of the connection control switchingelements included in the predetermined number of demultiplexers of theone set, for a thin film transistor as each of the switching elementsand for a thin film transistor as each of the switching elements towhich a control signal that is the same as or the same type as a controlsignal supplied to each of the switching elements in the one set amongthe connection control switching elements included in the predeterminednumber of demultiplexers in another set is supplied, the drain isarranged on the same side with respect to the gate.

(11) An active matrix substrate according to some embodiments of thedisclosure includes any of the above-described configurations (1) to(9), wherein the plurality of connection control switching elementsrespectively corresponding to the plurality of data signal lines is athin film transistor.

(12) An active matrix substrate according to some embodiments of thedisclosure includes the above-described configuration (1), wherein

the signal supply control circuit is a video inspection circuitconfigured to control whether to supply any of one or more inspectionvideo signals supplied from outside to each of the plurality of datasignal lines and is configured to supply any of the inspection videosignals to each of the plurality of data signal lines via acorresponding connection control switching element.

(13) A display device according to some embodiments of the presentdisclosure is an active matrix substrate including any ofabove-described configurations (2) to (11);

a data side drive circuit configured to supply, as a multiplexed datasignal, a signal in which two or more data signals respectively to besupplied to the two or more data signal lines in the group correspondingto each of the plurality of input terminals is time-division multiplexedto each of the plurality of input terminals; anda demultiplexing control circuit configured to generate demultiplexingcontrol signals to control each connection control switching element ineach of the plurality of demultiplexers so that the two or more datasignals respectively to be supplied to the two or more data signal linesin the group corresponding to each of the plurality of demultiplexersare generated by demultiplexing the multiplexed data signal supplied toeach of the plurality of input terminals from the data side drivecircuit by each of the plurality of demultiplexers corresponding to eachof the plurality of input terminal.

According to some embodiments of the disclosure, in a signal supplycontrol circuit, which may function as for example the demultiplexercircuit in the display device employing the SSD method or as the videoinspection circuit of the active matrix substrate, the plurality ofconnection control switching elements respectively corresponding to theplurality of data signal lines in the display portion is grouped into aplurality of sets of switching element group with two or more switchingelements as one set, the switching element group of each of theplurality of sets is arranged to be aligned in an extending direction ofthe plurality of data signal lines in a display portion with apredetermined number of the switching elements as a unit while aposition of the switching element group of each of the plurality of setsis sequentially shifted in the vertical direction with respect to theplurality of data signal lines, and in any two adjacent sets, adirection in which a position of the switching element group of one setis shifted in the vertical direction with the predetermined number ofswitching elements as the unit and a direction in which a position ofthe switching element group of another set is shifted in theabove-described vertical direction with the predetermined number ofswitching elements as the unit is opposite to each other. In this way,the connection control switching elements in the signal supply controlcircuit are arranged in a diagonal direction in which the direction ofshift in the vertical direction is alternately reversed for each set.Thus, when attention is paid to a layout pattern of a path in the signalsupply control circuit supplying the video signal (data signal) to eachdata signal line, not only for adjacent data signal lines connected toconnection control switching elements in the same set, but also adjacentdata signal lines connected to connection control switching elements indifferent sets, the difference between the layout patterns of two pathsrespectively corresponding to each of these adjacent data signal linesis relatively small. Thus, the substantial lengths (lengths inconsideration of the path layout pattern in the signal supply controlcircuit) of any adjacent data signal lines do not differ greatly. Thus,no significant difference in charging rate occurs for any adjacent datasignal lines in a case where such adjacent data signal lines are driven.As a result, occurrence of the striped unevenness in the display screencan be suppressed while the signal supply control circuit is formedintegrally with the pixel circuit by a diagonal arrangementconfiguration in the active matrix substrate having a narrow pixelpitch.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a block diagram illustrating an overall configuration of anactive matrix display device according to a first embodiment.

FIG. 2 is a circuit diagram illustrating a configuration of ademultiplexer circuit along with an electrical configuration of adisplay portion in the first embodiment.

FIG. 3 is a timing chart for describing operations of the demultiplexercircuit in the first embodiment.

FIG. 4 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in a known active matrix display device (firstknown example) corresponding to the first embodiment.

FIG. 5 is a circuit diagram for describing a problem in the first knownexample.

FIG. 6 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in the first embodiment.

FIG. 7 is a diagram for describing a problem (occurrence of stripedunevenness) in a case where a uniform gray levels display is performedin the first known example.

FIG. 8 is a circuit diagram for describing operations and effects in acase where a uniform gray levels display is performed in the firstembodiment.

FIG. 9 is a circuit diagram illustrating a configuration of ademultiplexer circuit along with an electrical configuration of adisplay portion in the modified example of the first embodiment.

FIG. 10 is a timing chart for describing operations of the demultiplexercircuit in the modified example of the first embodiment.

FIG. 11 is a circuit diagram illustrating a configuration of ademultiplexer circuit along with an electrical configuration of adisplay portion in a second embodiment.

FIG. 12 is a timing chart for describing operations of the demultiplexercircuit in the second embodiment.

FIG. 13 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in a known active matrix display device (secondknown example) corresponding to the second embodiment.

FIG. 14 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in the second embodiment.

FIG. 15 is a circuit diagram illustrating a configuration of ademultiplexer circuit along with an electrical configuration of adisplay portion in a third embodiment.

FIG. 16 is a timing chart for describing operations of the demultiplexercircuit in the third embodiment.

FIG. 17 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in a known active matrix display device (thirdknown example) corresponding to the third embodiment.

FIG. 18 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in the third embodiment.

FIG. 19A is a circuit diagram illustrating one demultiplexer in thethird embodiment.

FIG. 19B is a layout diagram illustrating an example of the layoutpattern of the above-described one demultiplexer.

FIG. 19C is a layout diagram illustrating another example of the layoutpattern of the above-described one demultiplexer.

FIG. 20 is a circuit diagram illustrating a configuration of ademultiplexer circuit in a fourth embodiment.

FIG. 21 is a timing chart for describing operations of the demultiplexercircuit in the fourth embodiment.

FIG. 22 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in a known active matrix display device (fourthknown example) corresponding to the fourth embodiment.

FIG. 23 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in the fourth embodiment.

FIG. 24 is a signal waveform diagram for describing effects in thefourth embodiment.

FIG. 25 is a layout diagram illustrating an example of a connection formof a control signal line of a demultiplexer circuit in the fourthembodiment.

FIG. 26 is a layout diagram illustrating another example of theconnection form of the control signal line of the demultiplexer circuitin the fourth embodiment.

FIG. 27 is a layout diagram for describing a layout pattern of thedemultiplexer circuit in the fifth embodiment.

FIG. 28 is a diagram for describing a relationship between a layoutpattern of a transistor as a switching element in a demultiplexercircuit and a feed-through voltage.

FIG. 29 is a diagram for describing a layout pattern for suppressing afeed-through voltage at a transistor as a switching element in ademultiplexer circuit.

FIG. 30 is a diagram for describing a problem in a case where a gatemetal pattern in the transistors of the demultiplexer circuit is shiftedin the first embodiment.

FIG. 31 is a diagram for describing an effect of a uniform gray levelsdisplay in a case where the gate metal pattern in the transistors of thedemultiplexer circuit is shifted in the fifth embodiment.

FIG. 32 is a circuit diagram for describing a video inspection circuitin a sixth embodiment.

FIG. 33 is a layout diagram for describing a layout pattern of a videoinspection circuit in a known active matrix substrate (fifth knownexample) corresponding to the sixth embodiment.

FIG. 34 is a layout diagram for describing a layout pattern of the videoinspection circuit in the sixth embodiment.

DESCRIPTION OF EMBODIMENTS

In the following, embodiments will be described with reference to theaccompanying drawings. Note that in each of the transistors referred tobelow, the gate terminal corresponds to a control terminal, one of thedrain terminal and the source terminal corresponds to a first conductionterminal, and the other corresponds to a second conduction terminal.Furthermore, “connection” in the present description means “electricalconnection” unless otherwise specified, and in the scope withoutdeparting from the subject matters of the present disclosure, itincludes not only a case to mean direct connection, but also a case tomean indirect connection through other elements.

1. First Embodiment 1.1 Overall Configuration and Operation Outline

FIG. 1 is a block diagram illustrating an overall configuration of aliquid crystal display device employing the SSD method (hereinafterreferred to as “display device of the first embodiment”) including anactive matrix substrate 100 according to a first embodiment. On theactive matrix substrate 100, a display portion 101 is formed and a gatedriver 50 as a scanning signal line drive circuit and a demultiplexercircuit 40 are formed, and furthermore a source driver 30 as a data sidedrive circuit is mounted (for example, COG mounted). The display deviceaccording to the first embodiment includes the active matrix substrate100, the source driver 30 mounted thereon and in addition, a displaycontrol circuit 20. An input signal Sin is supplied to the displaycontrol circuit 20 from the outside, and the input signal Sin includesan image signal representing an image to be displayed and a timingcontrol signal for displaying the image. The display device according tothe first embodiment displays a color image of three primary colorsconstituted by red (R), green (G), and blue (B) on the display portion101 based on the input signal Sin.

FIG. 2 is a circuit diagram illustrating a configuration of thedemultiplexer circuit 40 in the active matrix substrate 100 according tothe present embodiment along with an electrical configuration of thedisplay portion 101. As illustrated in FIG. 1 and FIG. 2, in the displayportion 101 of the active matrix substrate 100, m groups of source linegroups (SLR1, SLG1, and SLB1) to (SLRm, SLGm, and SLBm), in other words3 m source lines SLR1, SLG1, and SLB1 to SLRm, SLGm, and SLBm, as datasignal lines, with three source lines SLRj, SLGj, and SLBj as one group,a plurality of (n) gate lines GL1 to GLn as scanning signal lines, and aplurality of (n×3 m) pixel circuits 10 arranged in a matrix along thesource lines SLR1, SLG1, and SLB1 to SLRm, SLGm, and SLBm and the gatelines GL1 to GLn are arranged.

Each pixel circuit 10 corresponds to any one of the source lines SLR1,SLG1, and SLB1 to SLRm, SLGm, and SLBm, corresponds to any one of thegate lines GL1 to GLn, and is connected to corresponding gate line GLiand source line SLXj (i=1 to n, j=1 to m, X=R, G, and B). Here, thesource line SLRj is a signal line for transmitting a data signal DRjindicating a red pixel, the source line SLGj is a signal line fortransmitting a data signal DGj indicating a green pixel, and the sourceline SLBj is a signal line for transmitting a data signal DBj indicatinga blue pixel. The pixel circuit 10 connected to the source line SLRj isa pixel circuit for forming the red pixel, the pixel circuit 10connected to the source line SLGi is a pixel circuit for forming thegreen pixel, and the pixel circuit 10 connected to the source line SLBjis a pixel circuit for forming the blue pixel (j=1 to m).

As illustrated in FIG. 2, each pixel circuit 10 includes a thin filmtransistor (hereinafter abbreviated as “TFT”) 11 as a switching elementin which a gate terminal is connected to a corresponding gate line GLiand a source terminal is connected to a corresponding source line SLXj(X is any one of R, B, and G), and a pixel electrode Ep connected to adrain terminal of the TFT (hereinafter, also referred to as “pixel TFT”)11. Each pixel circuit 10 constitutes a pixel forming section forforming one pixel in the image to be displayed together with a commonelectrode Ec commonly provided to the n×3 m pixel circuits 10, and aliquid crystal layer sandwiched between the pixel electrode Ep and thecommon electrode Ec and commonly provided to the n×3 m pixel circuits10. A pixel capacitance Cp is constituted by liquid crystal capacitanceformed by the pixel electrode Ep and the common electrode Ec. Althoughan auxiliary capacity is typically provided in parallel with the liquidcrystal capacitance so that a voltage is reliably held in the pixelcapacitance Cp, the auxiliary capacity is not directly related to thepresent disclosure, and thus the description and illustration thereofwill be omitted.

As the pixel TFT 11 in the pixel circuit 10, a thin film transistorusing amorphous silicon for the channel layer, a thin film transistorusing low-temperature polysilicon for the channel layer (LTPS-TFT), athin film transistor using an oxide semiconductor for the channel layer(hereinafter referred to as “oxide TFT”) and the like can be employed.As the oxide TFT, for example, a thin film transistor having an oxidesemiconductor layer including an In—Ga—Zn—O based semiconductor (forexample, indium gallium zinc oxide) can be employed. The gate driver 50and the demultiplexer circuit 40 are formed integrally with the pixelcircuit 10 on the active matrix substrate 100. Thus, the samesemiconductor material as that of the channel layer of the pixel TFT 11in the pixel circuit 10 is used for the channel layer of the TFT in thedemultiplexer circuit 40. Alternatively, in the present embodiment, itis also possible to employ a configuration in which the oxidesemiconductor is used for the channel layer of the pixel TFT 11 in thepixel circuit 10, and the low-temperature polysilicon is used for thechannel layer of the TFT in the gate driver 50, the demultiplexercircuit 40, and the like. The same applies to other embodimentsdescribed later.

The display control circuit 20 receives the input signal Sin from theoutside, and based on the input signal Sin, generates and outputs a dataside control signal Scd, a scanning side control signal Scs, ademultiplexing control signal Ssw, and a common voltage Vcom (notillustrated). The data side control signal Scd is supplied to the sourcedriver 30 as the data side drive circuit, the scanning side controlsignal Scs is supplied to the gate driver 50 as the scanning signal linedrive circuit, and the demultiplexing control signal Ssw is supplied tothe demultiplexer circuit 40. As a result, the display control circuit20 controls the demultiplexer circuit 40 in addition to controlling thesource driver 30 and the gate driver 50. In this manner, in the presentembodiment, a circuit controlling the demultiplexer circuit 40, in otherwords, demultiplexing control circuit is included in the display controlcircuit 20, but may be separated from the display control circuit 20, ormay be provided in the source driver 30 or the gate driver 50.

The gate driver 50 generates scanning signals G1, G2, . . . , Gn forsequentially selecting n gate lines GL1, GL2, . . . , GLn based on thescanning side control signal Scs, and applies the scanning signals G1,G2, . . . , Gn to the n gate lines GL1, GL2, . . . , GLn, respectively.By driving the gate lines GL1 to GLn by the gate driver 50 in thismanner, the n gate lines GL1 to GLn are sequentially selected for eachone horizontal period, and the sequential selection of the n gate linesGL1 to GLn in this manner is repeated with one frame period as a cycle.Here, the term “horizontal period” refers to a period of a portioncorresponding to one line of the display image in the image signal basedon the horizontal scanning and the vertical scanning.

The data side control signal Scd supplied to the source driver 30includes an image signal Sv representing an image to be displayed and adata side timing control signal Sct (e.g., a start pulse signal, and aclock signal). Based on the data side control signal Scd, the sourcedriver 30 generates and outputs the data side output signals Do1 to Domas the video signals at a timing corresponding to the driving of thegate lines GL1 to GLn by the application of the scanning signals G1 toGn, and drives the source lines SLR1, SLG1, and SLB1 to SLRm, SLGm, andSLBm via the demultiplexer circuit 40 (details will be described later).In general, in a display device employing the SSD method, the sourcelines in the active matrix substrate 100 are grouped into a plurality ofgroups of source lines with two or more source lines as one group, andthe source driver includes a plurality of output terminals respectivelycorresponding to the plurality of groups as output terminals for drivingsource lines. As illustrated in FIG. 2, in the present embodiment, 3 msource lines SLR1, SLG1, and SLB1 to SLRm, SLGm, and SLBm in the activematrix substrate 100 are grouped into m groups of source line groups(SLR1, SLG1, and SLB1), (SLR2, SLG2, and SLB2), . . . , (SLRm, SLGm, andSLBm) with three source lines SLRj, SLGj, and SLBj as one group. Thesource driver 30 as the data side drive circuit includes m outputterminals To1 to Tom respectively corresponding to the m groups asoutput terminals for source line driving. The data side output signalDoj output from each output terminal Toj (j=1 to m) is a video signal(hereinafter, also referred to as “multiplexed data signal”) in whichdata signals DRj, DGj, and DBj respectively to be applied to the threesource lines SLRj, SLGj, and SLBj of the corresponding group aretime-division multiplexed.

The demultiplexer circuit 40 receives the multiplexed data signals Do1to Dom from the source driver 30, demultiplexes the multiplexed datasignals Do1 to Dom based on the demultiplexing control signal Ssw andsupplies the multiplexed signal as the 3 m data signals DR1, DG1, andDB1 to DRm, DGm, and DBm to the source lines SLR1, SLG1, and SLB1 toSLRm, SLGm, and SLBm, respectively.

As described above, the data signals DR1, DG1, and DB1 to DRm, DGm, andDBm are applied to the source lines SLR1, SLG1, and SLB1 to SLRm, SLGm,and SLBm, and the scanning signals G1 to Gn are applied to the gatelines GL1 to GLn. In addition, common voltage Vcom is supplied to thecommon electrode Ec from the display control circuit 20. By driving thesource lines SLR1, SLG1, and SLB1 to SLRm, SLGm, and SLBm and gate linesGL1 to GLn in the display portion 101, pixel data based on the imagesignal Sv in the input signal Sin is written to each pixel circuit 10,and by irradiating the back face of the display portion 101 with lightfrom the backlight (not illustrated), the image represented by the imagesignal Sv is displayed on the display portion 101.

1.2 Details of Configuration and Operation of the Demultiplexer Circuit

FIG. 3 is a timing chart for describing operations of the demultiplexercircuit 40 in the present embodiment. Hereinafter, the configuration andoperations of the demultiplexer circuit 40 will be described in detailwith reference to FIG. 3 in conjunction with above-described FIG. 2.

As illustrated in FIG. 2, the demultiplexer circuit 40 in the presentembodiment includes m demultiplexers 411, 412, . . . , 41 m respectivelycorresponding to the m groups of source line groups (SLR1, SLG1, andSLB1), (SLR2, SLG2, and SLB2), . . . , (SLRm, SLGm, and SLBm), andincludes m input terminals Td1 to Tdm respectively corresponding to them demultiplexers 411 to 41 m. The m input terminals Td1 to Tdm areconnected to m output terminals To1 to Tom of the source driver 30,respectively, via each of m data output lines as video signal lines, andthe multiplexed data signals Do1 to Dom output from the source driver 30are supplied to the input terminals Td1 to Tdm, respectively, of thedemultiplexer circuit 40. Each demultiplexer 41 j (j=1 to m) connectscorresponding input terminal Tdj to any of the three source lines SLRj,SLGj, and SLBj of the corresponding group based on the demultiplexingcontrol signal Ssw, and switches the source line connected to the inputterminal Tdj among the three source lines SLRj, SLGj, and SLBj in eachhorizontal period. As a result, the multiplexed data signal Doj suppliedto each input terminal Tdj of the demultiplexer circuit 40 isdemultiplexed and is supplied, as the data signals DRj, DGj, and DBj, tothe three source lines SLRj, SLGj, and SLBj, respectively, of thecorresponding group.

As illustrated in FIG. 2, each demultiplexer 41 j (j=1 to m) in thedemultiplexer circuit 40 includes TFTs (hereinafter referred to as“connection control transistors”) MRj, MGj, and MBj as three switchingelements connected to the three source lines SLRj, SLGj, and SLBj,respectively, of the corresponding group. Hereinafter, in a case ofdistinguishing between the three source lines SLRj, SLGj, and SLBj, thesource lines are respectively referred to as “R source line SLRj”, “Gsource line SLGj”, and “B source line SLBj”, and in a case ofdistinguishing between the three connection control transistors MRj,MGj, and MBj, the source lines are respectively referred to as “Rconnection control transistor MRj”, “G connection control transistorMGj”, and “B connection control transistor MBj”. The input terminal Tdjcorresponding to the demultiplexer 41 j among the m input terminals Td1to Tdm is connected to the R source line SLRj via the R connectioncontrol transistor MRj, connected to the G source line SLGj via the Gconnection control transistor MGj, and connected to the B source lineSLBj via the B connection control transistor MBj.

The demultiplexing control signal Ssw supplied to the demultiplexercircuit 40 includes an R control signal ASWR, a G control signal ASWG,and a B control signal ASWB as illustrated in FIG. 3, and three controlsignal lines for respectively transmitting the control signals ASWR,ASWG, and ASWB are arranged in the demultiplexer circuit 40. Asillustrated in FIG. 2, the three control signal lines supply the Rcontrol signal ASWR, the G control signal ASWG, and the B control signalASWB to the gate terminals of the R connection control transistor MRj,the G connection control transistor MGj, and the B connection controltransistor MBj, respectively, in each demultiplexer 41 j.

As described above, the data side output signal Doj as the video signalsupplied from the source driver 30 to the input terminal Tdjcorresponding to each demultiplexer 41 j is a video signal in which thedata signals DRj, DGj, and DBj to be applied to the three source linesSLRj, SLGj, and SLBj, respectively, of the corresponding group aretime-division multiplexed, and a value switches for each ⅓ horizontalperiod as illustrated in FIG. 3. In FIG. 3, “DRj (i)” indicates pixeldata to be written to the pixel circuit 10 connected to the j-th Rsource line SLRj and the i-th gate line GLi (hereinafter also referredto as “R pixel circuit P×R (i, j)” in the i-th row and the j-th column),“DGj (i)” indicates pixel data to be written to the pixel circuit 10connected to the j-th G source line SLGj and the i-th gate line GLi(hereinafter also referred to as “G pixel circuit P×G (i, j)” in thei-th row and the j-th column), and “DBj (i)” indicates pixel data to bewritten to the pixel circuit 10 connected to the j-th B source line SLBjand the i-th gate line GLi (hereinafter also referred to as “B pixelcircuit P×B (i, j)” in the i-th row and the j-th column).

In each demultiplexer 41 j in the demultiplexer circuit 40 configured asdescribed above, the R connection control transistor MRj, the Gconnection control transistor MGj, and the B connection controltransistor MBj perform the on/off operation in accordance with thedemultiplexing control signal Ssw (R control signal ASWR, G controlsignal ASWG, and B control signal ASWB) illustrated in FIG. 3. As aresult, each of the multiplexed data signal Doj output from the sourcedriver 30 is demultiplexed and supplied, as the three data signals DRj,DGj, and DBj, to the three source lines SLRj, SLGj, and SLBj,respectively, corresponding to the demultiplexer 41 j.

In this manner, when the connection control transistor MXj connected tothe source line SLXj to which a voltage is applied changes from the onstate to the off state (X is either R, G, or B), each voltage of thethree data signals DRj, DGj, and DBj supplied to the three source linesSLRj, SLGj, and SLBj, respectively, corresponding to each demultiplexers41 j is held in the source line SLXj (wiring line capacitance thereof).

As described above, the voltage of the data signal DXj supplied to andheld in each source line SLXj (j=1 to m, X=R, G, and B) is written, aspixel data, in the pixel circuit P×X (i, j) in the i-th row and the j-thcolumn connected to the gate line GLi (i is any one of 1 to n) in theselected state among the n gate lines GL1 to GLn and the source lineSLXj. Specifically, the voltage of the data signal DXj supplied to andheld in the source line SLXj is supplied to via the pixel TFT 11 andheld in the pixel capacitance Cp in the pixel circuit P×X (i, j).

1.3 Layout of Demultiplexer Circuit

As described above, in a case where the SSD method is employed in adisplay device having a narrow pixel pitch, the transistors constitutingthe demultiplexer circuit sometimes cannot be arranged in the verticaldirection with respect to the source line as the data signal line on theactive matrix substrate. In this case, a diagonal arrangementconfiguration as illustrated in FIG. 4 is employed. In a known activematrix display device employing the SSD method (hereinafter referred toas “first known example”) employing the diagonal arrangementconfiguration, m demultiplexers 411 to 41 m in the demultiplexer circuit40 are grouped with adjacent three demultiplexers as one set, and nineconnection control transistors included in the three demultiplexers ineach set are arranged to be aligned in the extending direction of thesource line with the three transistors included in one demultiplexer asa unit while positions of the nine connection control transistors aresequentially shifted in the vertical direction with respect to thesource line.

In FIG. 4, both of hatched patterns extending in the generally verticaldirection (the up and down direction in the drawing) and hatchedpatterns extending in the horizontal direction (the left and rightdirection in the drawing) indicate patterns of wiring lines formed of ametal material (referred to as “source metal”) in a certain layer of theactive matrix substrate 100, grid-like hatched patterns indicatepatterns of wiring lines formed of a metal material (referred to as“gate metal”) in another layer (the gate metal is also used for wiringlines of gate lines as scanning signal lines), and dot hatched patternsindicate patterns of regions formed of semiconductor material (referredto herein as “silicon”) in yet another layer. In addition, small squareswithout hatching indicate contact holes for electrically conductiveconnection between the source metal patterns and the silicon patterns,and dot hatched small squares indicate contact holes for electricallyconductive connection between the source metal patterns and the gatemetal patterns.

As can be seen in FIG. 2, FIG. 4 indicates a layout pattern of ninetransistors (TFTs) included in one set constituted by the j-th to the(j+2)-th demultiplexers 41 j, 41 j+1, and 41 j+2, and nine transistors(TFTs) included in another set constituted by the (j+3)-th to the(j+5)-th demultiplexers 41 j+3, 41 j+4, and 41 j+5. The j-th to the(j+5)-th multiplexed data signals Doj to Doj+5 as time-divisionmultiplexed video signals are demultiplexed by the j-th to the (j+5)-thdemultiplexers 41 j to 41 j+5 in the two sets, and supplied, as the datasignals DRj, DGj, and DBj to DRj+5, DGj+5, and DBj+5, to the sourcelines SLRj, SLGj, and SLBj to SLRj+5, SLGj+5, and SLBj+5, respectively.Note that the same applies to a layout pattern in the present embodimentillustrated in FIG. 6, which will be described later.

In FIG. 4, when attention is paid to the layout pattern (hereinafterreferred to as the “path layout pattern”) of the path in thedemultiplexer circuit supplying the data signal DXj to each source lineSLXj (j=1 to m, X=R, G, and B), the difference between the path layoutpatterns is relatively small for adjacent source lines in the same set.However, in a case where a demultiplexer to which one of the adjacentsource lines is connected and a demultiplexer to which the other one ofthe adjacent source lines is connected are included in different sets,as the (j+2)-th B source line SLBj+2 and the (j+3)-th R source lineSLRj+3, path layout patterns for the adjacent source lines aresignificantly different from each other, and the length of one sourceline (SLBj+2) and the length of the other source line (SLRj+3) are alsosignificantly different. As a result, significant difference occursbetween the charging rate when the one source line (SLBj+2) is chargedwith the data signal DBj+2 supplied thereto and the charging rate whenthe other source line (SLRj+3) is charged with the data signal DRj+3supplied thereto. Hereinafter, the reason why such the significantdifference in the charging rate occurs will be described with referenceto FIG. 5. Note that the charging rate refers to the ratio Vsl/Vsl(ideal) of the voltage Vsl actually held in the source line SLXj withrespect to the voltage Vsl (ideal) held in the source line SLXj in acase where the wiring line capacitance Csl of the source line SLXj isideally charged by the data signal DXj supplied from the source driver30 to each source line SLXj (j=1 to m, X=R, G, and B) via thedemultiplexer circuit 40.

FIG. 5 indicates an equivalent circuit of a path (hereinafter referredto as “DBj+2 supply path”) for supplying the data signal DBj+2 to the(j+2)-th B source line SLBj+2, and an equivalent circuit of a path(hereinafter referred to as “DRj+3 supply path”) for supplying the datasignal DRj+3 to the (j+3)-th R source line SLRj+3, and indicates avoltage waveform of signals Doj+2 and Doj+3 output from output terminalsToj+2 and Toj+3, respectively, of the source driver 30 corresponding tothe starting points of the DBj+2 supply path and the DRj+3 supply path,respectively, and respective waveforms of voltages Vsl (DBj+2) and Vsl(DRj+3) at connection points of the source lines SLBj+2 and SLRj+3corresponding to the end points of the DBj+2 supply path and the DRj+3supply path, respectively (the connection point between the wiring lineresistance Rsl and the wiring line capacitance Csl in the source lineSLBj+2, and the connection point between the wiring line resistance Rsland the wiring line capacitance Csl in the source line SLRj+3).

Note that, as illustrated in FIG. 5, in both the DBj+2 supply path andthe DRj+3 supply path, a wiring line (hereinafter referred to as “videowiring line section”) from the output terminal of the source driver 30to the input terminal of the demultiplexer circuit 40 is represented bythe wiring line resistance R1 and the wiring line capacitance C1, and awiring line (hereinafter referred to as “display wiring line section”)from the output terminal of the demultiplexer to the terminal end of thesource line connected to the output terminal is represented by thewiring line resistance Rsl and the wiring line capacitance Csl. A pathin the demultiplexer circuit 40 of the DBj+2 supply path is constitutedby a wiring line of a source metal connected to the input terminal ofthe demultiplexer circuit 40 and the connection control transistor MBj+2connected to the output terminal of the demultiplexer circuit 40, and apath in the demultiplexer circuit 40 of the DRj+3 supply path isconstituted by the connection control transistor MRj+3 connected to aninput terminal of the demultiplexer circuit 40 and a wiring line of asource metal connected to the output terminal of the demultiplexercircuit 40. In the equivalent circuits illustrated in FIG. 5, theconnection control transistors MBj+2 and MRj+3 in the demultiplexercircuit 40 are both represented by the on resistance Ron, and the wiringlines of the source metal in the demultiplexer circuit 40 are bothrepresented by the wiring line resistance R2 and the wiring linecapacitance C2.

In a narrow sense, the source line SLXj (j=1 to m, X=R, G, and B) as thedata signal line can be considered as a wiring line constituted by thesource metal in the display portion 101. However, in the DRj+3 supplypath as illustrated in FIG. 5, the wiring line of the source metal inthe demultiplexer circuit 40 is directly connected to the wiring line ofthe source metal in the display portion 101. In this case, a wiring lineconstituted by the wiring line of the source metal in the displayportion 101 and the wiring line of the source metal connected thereto inthe demultiplexer circuit 40 can be considered as a source line. Thus,in the following, it is assumed that the source line SLXj also includesthe wiring line of the source metal in the demultiplexer circuit 40directly connected to the wiring line of the source metal in the displayportion 101. Thus, as illustrated in FIG. 5, although the source lineSLBj+2 corresponding to the DBj+2 supply path is represented by only thewiring line resistance Rsl and the wiring line capacitance Csl, thesource line SLRj+3 corresponding to the DRj+3 supply path is representedas a circuit to which the wiring line resistances R2 and Rsl, and thewiring line capacitances C2 and Csl are connected as illustrated in FIG.5. Thus, the source line SLBj+2 corresponding to the DBj+2 supply pathis longer than the source line SLRj+3 corresponding to the DRj+3 supplypath, and the wiring line load is large.

In the equivalent circuits of the DBj+2 supply path and the DRj+3 supplypath described above (FIG. 5), the on resistance Ron of the connectioncontrol transistors MBj+2 and MRj+3 is significantly greater than thatof the wiring line resistances R1, R2, and Rsl (the value of the onresistance Ron is typically from several times to tens of times thewiring line resistance value (R1+R2+Rsl)). On the other hand, as can beseen in FIG. 5, when the source line SLBj+2 is driven by the data sideoutput signal Doj+2 that changes in a stepped shape, the current flowingin the connection control transistor MBj+2 (on resistance Ron) in theDBj+2 supply path includes only the current Isl for charging the wiringline capacitance Csl of the source metal of the display wiring linesection. However, when the source line SLRj+3 is driven by the data sideoutput signal Doj+3 that also changes in a stepped shape, the currentflowing in the connection control transistor MRj+3 (on resistance Ron)in the DRj+3 supply path includes the current 12 for charging the wiringline capacitance C2 of the source metal in the demultiplexer circuit 40in addition to the current Isl for charging the wiring line capacitanceCsl of the source metal of the display wiring line section. Thus, thevoltage drop in the connection control transistor MRj+3 (on resistanceRon) in the DRj+3 supply path is greater than the voltage drop in theconnection control transistor MBj+2 (on resistance Ron) in the DBj+2supply path. As a result, as illustrated in FIG. 5, the voltage (voltageof the data signal DRj+3) of the wiring line capacitance Csl of thesource line (source metal) SLRj+3 of the display wiring line sectionconnected to the DRj+3 supply path changes more slowly than the voltage(voltage of the data signal DBj+2) of the wiring line capacitance Csl ofthe source line (source metal) SLBj+2 of the display wiring line sectionconnected to the DBj+2 supply path, and thus the charging rate of thewiring line capacitance Csl of the source line SLRj+3 is lower than thecharging rate of the wiring line capacitance Csl of the source lineSLBj+2.

As described above, the layout pattern of the demultiplexer circuit 40in the first known example includes a portion where two path layoutpatterns (in the demultiplexer circuit 40) corresponding to adjacentsource lines are significantly different from each other, in otherwords, a portion where the shortest source line and the longest sourceline are adjacent to each other, and in the portion, source lines havingsignificantly different wiring line loads are adjacent to each other. Asa result, even if each source line is driven so that the entire screenis displayed in the same gray scale, the striped unevenness asillustrated in FIG. 7 may be visually recognized. In other words, whenassuming regions of the display portion 101 corresponding to each set ofthe demultiplexer, a phenomenon occurs in which the luminance issignificantly different at the boundaries of the regions, and this maybe visually recognized as striped unevenness.

In the present embodiment as well, the diagonal arrangementconfiguration is employed for the demultiplexer circuit 40, and mdemultiplexers 411 to 41 m are grouped with adjacent threedemultiplexers as one set, and nine connection control transistorsincluded in the three demultiplexers in each set are arranged to bealigned in the extending direction of the source line with the threetransistors included in the one demultiplexer as a unit while positionsof the nine connection control transistors are sequentially shifted inthe vertical direction with respect to the source line. However, unlikethe layout pattern (FIG. 4) of the demultiplexer circuit 40 in the firstknown example, in the present embodiment, a layout pattern asillustrated in FIG. 6 is employed for the demultiplexer circuit 40 inorder to suppress the occurrence of the striped unevenness asillustrated in FIG. 7. In other words, in any two adjacent sets, adirection in which nine transistors included in the three demultiplexersin one set are shifted in the vertical direction with respect to thesource line with the three transistors as a unit and a direction inwhich nine transistors included in the three demultiplexers in the otherset are shifted in the vertical direction with respect to the sourceline with the three transistors as a unit are opposite to each other(hereinafter, the configuration of such layout pattern is referred to asthe “diagonal arrangement configuration of alternately reversing shiftdirection”).

According to the present embodiment, since the layout pattern of thedemultiplexer circuit 40 is configured to be the diagonal arrangementconfiguration of alternately reversing shift direction as illustrated inFIG. 6, although the lengths of the source lines SLXj (j=1 to m, X=R, G,and B) are different from each other, the difference between path layoutpatterns corresponding to any adjacent source lines are relativelysmall, and the lengths of the adjacent source lines will not besignificantly different from each other. Thus, no significant differencein the charging rate occurs between the adjacent source lines when theyare driven. As a result, occurrence of the striped unevenness that mayoccur in the first known example is suppressed, and in a case where eachsource line is driven so that the entire screen is displayed in the samegray scale, a display (luminance distribution) as illustrated in FIG. 8is obtained, and the striped unevenness is not visually recognized.

1.4 Effect

As described above, according to the present embodiment, since thelayout pattern of the demultiplexer circuit 40 is configured to be thediagonal arrangement configuration of alternately reversing shiftdirection as illustrated in FIG. 6, in a display device such as HDMhaving a narrow pixel pitch, the occurrence of the striped unevenness(FIG. 7) can be suppressed while the demultiplexer circuit is formedintegrally with the pixel circuit on the active matrix substrate (seeFIG. 8).

1.5 Modified Example of First Embodiment

In the diagonal arrangement configuration of alternately reversing shiftdirection in the above-described embodiment, the demultiplexers 411 to41 m in the demultiplexer circuit 40 are grouped with threedemultiplexers as one set, and nine connection control transistorsincluded in the three demultiplexers in each set are arranged to bealigned in the extending direction of the source line with the threetransistors included in the one demultiplexer as a unit while positionsof the nine connection control transistors are sequentially shifted inthe vertical direction with respect to the source line (see FIG. 6).However, instead, one or a plurality of demultiplexers other than threemay be grouped as one set, and according to the grouping, thetransistors included in the one set may be arranged to be aligned in theextending direction of the source line with one or a plurality oftransistors as a unit while positions of the transistors aresequentially shifted in the vertical direction with respect to thesource line. The same applies to other embodiments such as a secondembodiment described later.

In addition, as the switching elements in the demultiplexer circuit 40in the above-described embodiment, in other words, as the switchingelements for demultiplexing the multiplexed data signal Doj, N-channeltransistors MRj, MGj, and MBj are used. However, instead of this,P-channel transistors MRj, MGj, and MBj may be used as shown in FIG. 9(j=1 to m). The same applies to the second embodiment, which will bedescribed later.

FIG. 9 is a circuit diagram illustrating a configuration of ademultiplexer circuit 40 along with an electrical configuration of adisplay portion 101 in the modified example of the first embodiment. Inthe modified example, P-channel transistors are used as the switchingelements in the demultiplexer circuit 40, and thus, as thedemultiplexing control signal Ssw to be supplied to the demultiplexercircuit 40, instead of the R control signal ASWR, the G control signalASWG, and the B control signal ASWB illustrated in FIG. 3, the R controlsignal ASWR, the G control signal ASWG, and the B control signal ASWBillustrated in FIG. 10 are generated by the display control circuit 20.

2. Second Embodiment

Next, liquid crystal display device employing the SSD method(hereinafter referred to as “display device of the second embodiment”)including an active matrix substrate 100 according to a secondembodiment will be described. The overall configuration of the displaydevice according to the second embodiment is substantially the same asthe display device of the first embodiment (see FIG. 1) except for theconfiguration of the source line and the configuration of thedemultiplexer circuit 40, and the same reference signs are assigned tothe same or corresponding components and detailed descriptions of thosecomponents will be omitted.

FIG. 11 is a circuit diagram illustrating a configuration of thedemultiplexer circuit 40 in the active matrix substrate 100 according tothe present embodiment along with an electrical configuration of thedisplay portion 101. As illustrated in FIG. 11, in the display portion101 of the active matrix substrate 100, m groups of source line groups(SLA1 and SLB1) to (SLAm and SLBm) with two source lines SLAj and SLBjas one group, in other words, 2 m source lines SLA1 and SLB1 to SLAm andSLBm, as data signal lines, a plurality of (n) gate lines GL1 to GLn asscanning signal lines, and a plurality of (n×2 m) pixel circuits 10arranged in a matrix along the source lines SLA1 and SLB1 to SLAm andSLBm and the gate lines GL1 to GLn are arranged.

Each pixel circuit 10 corresponds to any one of the source lines SLA1and SLB1 to SLAm and SLBm, corresponds to any one of the gate lines GL1to GLn, and is connected to a corresponding gate line GLi and a sourceline SLXi (i=1 to n, j=1 to m, X=R and B).

The configuration of each pixel circuit 10 is the same as that of thepixel circuit 10 in the first embodiment (see FIG. 2), and thus, thedescription thereof will be omitted. The configuration of the displaycontrol circuit 20, the source driver 30 as the data side drive circuit,and the gate driver 50 as the scanning signal line drive circuit aresubstantially the same as the display control circuit 20, the sourcedriver 30, and the gate driver 50 in the first embodiment (see FIG. 2).However, the demultiplexers 41 j in the above-described first embodimentis configured to demultiplex the multiplexed data signal Doj that istime-division multiplexed with a multiplicity of three, whereas thedemultiplexers 41 j in the present embodiment is configured todemultiplex the multiplexed data signal Doj that is time-divisionmultiplexed with a multiplicity of two. Accordingly, the specificconfigurations of the display control circuit 20 and the source driver30 are slightly different from that of the display control circuit 20and the source driver 30 in the first embodiment. The differences willbe described below together with the demultiplexer circuit 40 accordingto the present embodiment.

As illustrated in FIG. 11, in the present embodiment, the source driver30 includes output terminals To1 to Tom corresponding to demultiplexers411 to 41 m, respectively, the demultiplexers 411 to 41 m correspond tosource line groups (SLA1 and SLB1) to (SLAm and SLBm), respectively,input terminal of each demultiplexer 41 j is connected to acorresponding output terminal Toj of the source driver 30, and (two)output terminals of each demultiplexers 41 j are respectively connectedto source lines SLAj and SLBj constituting source line groups of thecorresponding group (j=1 to m).

In the display device according to the present embodiment, asillustrated in FIG. 11 and FIG. 12, the source driver 30 outputs, fromeach output terminal Toj, a video signal as the multiplexed data signalDoj in which the data signals DAj and DBj to be applied to the sourcelines SLAj and SLBj, respectively, connected to the correspondingdemultiplexer 41 j are time-division multiplexed.

Each demultiplexer 41 j in the present embodiment includes TFTs(hereinafter referred to as “connection control transistors”) MAj andMBj as two switching elements connected to the two source lines SLAj andSLBj, respectively, of a corresponding group. Hereinafter, in a case ofdistinguishing between the two source lines SLAj and SLBj, the twosource lines are referred to as “A source line SLAj” and “B source lineSLBj”, respectively, and in a case of distinguishing between the twoconnection control transistors MAj and MBj, each is referred to as “Aconnection control transistor MAj” and “B connection control transistorMBj”, respectively. The input terminal Tdj of each demultiplexer 41 j isconnected to the A source line SLAj via the A connection controltransistor MAj, and is connected to the B source line SLBj via the Bconnection control transistor MBj. Each demultiplexer 41 j receives themultiplexed data signal Doj from the corresponding output terminal Tojof the source driver 30, demultiplexes the multiplexed data signal Dojbased on the demultiplexing control signal Ssw, and supplies thereof asthe two data signals DAj and DBj to the source lines SLAj and SLBj,respectively (j=1 to m). The display control circuit 20 generatescontrol signals ASWA and ASWB as illustrated in FIG. 12 as thedemultiplexing control signal Ssw.

As described above, the data signals DA1 and DB1 to DAm and DBm areapplied to the source lines SLA1 and SLB1 to SLAm and SLBm, and thescanning signals G1 to Gn are applied to the gate lines GL1 to GLn. Inaddition, common voltage Vcom is supplied to the common electrode Ecfrom the display control circuit 20. By driving the source lines SLA1and SLB1 to SLAm and SLBm and gate lines GL1 to GLn in the displayportion 101, pixel data based on the image signal Sv in the input signalSin is written to each pixel circuit 10, and by irradiating the backface of the display portion 101 with light from the backlight (notillustrated), the image represented by the image signal Sv is displayedon the display portion 101. Note that, details of the configuration andoperations of each pixel circuit 10 are substantially the same as thatof the pixel circuit 10 in the first embodiment, and thus, thedescription thereof will be omitted.

FIG. 13 is a layout diagram for describing a layout pattern of thedemultiplexer circuit 40 in a known active matrix display deviceemploying the SSD method (hereinafter referred to as “second knownexample”) including a configuration similar to those described above. Inthe second known example as well, m demultiplexers 411 to 41 m in thedemultiplexer circuit 40 are grouped with adjacent three demultiplexersas one set, and six connection control transistors included in the threedemultiplexers in each set are arranged to be aligned in the extendingdirection of the source line with the two transistors included in theone demultiplexer as a unit while positions of the six connectioncontrol transistors are sequentially shifted in the vertical directionwith respect to the source line. FIG. 13 indicates a layout pattern ofsix transistors included in one set constituted by the j-th to the(j+2)-th demultiplexers 41 j, 41 j+1, and 41 j+2, and six transistorsincluded in another set constituted by the (j+3)-th to the (j+5)-thdemultiplexers 41 j+3, 41 j+4, and 41 j+5. The j-th to the (j+5)-thmultiplexed data signals Doj to Doj+5 as time-division multiplexed videosignals are demultiplexed by the j-th to the (j+5)-th demultiplexers 41j to 41 j+5 in the two sets, and is supplied, as the data signals DAjand DBj to DAj+5 and DBj+5, to the source lines SLAj and SLBj to SLAj+5and SLBj+5, respectively. Note that, the same applies to the layoutpattern of the present embodiment illustrated in FIG. 14, which will bedescribed later.

In FIG. 13, when attention is paid to the layout pattern (path layoutpattern) of the path in the demultiplexer circuit supplying the datasignal DXj to each source line SLXj (j=1 to m, X=A and B), thedifference between the path layout patterns is relatively small foradjacent source lines in the same set. However, in a case where ademultiplexer to which one of the adjacent source lines is connected anda demultiplexer to which the other is connected are included indifferent sets, as the (j+2)-th B source line SLBj+2 and the (j+3)-th Asource line SLAj+3, path layout patterns for the adjacent source linesare significantly different, and the length of one source line (SLBj+2)and the length of the other source line (SLAj+3) are also significantlydifferent. As a result, significant difference occurs between thecharging rate when the one source line (SLBj+2) is charged with avoltage of the data signal DBj+2 supplied thereto and the charging ratewhen the other source line (SLRj+3) is charged with a voltage of thedata signal DRj+3 supplied thereto. Thus, in the second known example aswell, similar to the first known example described above, even if eachsource line is driven so that the entire screen is displayed in the samegray scale, the striped unevenness as illustrated in FIG. 7 may bevisually recognized.

In contrast, in the present embodiment, a layout pattern as illustratedin FIG. 7 is employed for the demultiplexer circuit 40 in order tosuppress the occurrence of the striped unevenness as illustrated in FIG.14. In other words, similar to the above-described second known example(FIG. 13), six connection control transistors in one set are arranged tobe aligned in the extending direction of the source line with twotransistors included in one demultiplexer as a unit while positions ofthe six transistors are sequentially shifted in the vertical directionwith respect to the source line. However, unlike the second knownexample, in any two adjacent sets, a direction in which six transistorsincluded in the three demultiplexers in one set are shifted in thevertical direction with respect to the source line with the twotransistors as a unit and a direction in which six transistors includedin the three demultiplexers in the other set are shifted in the verticaldirection with respect to the source line with the two transistors as aunit are opposite to each other. In other words, the layout pattern ofthe demultiplexer circuit 40 is the same as that of the first embodiment(FIG. 6), and is configured to be the diagonal arrangement configurationof alternately reversing shift direction.

According to the present embodiment, although the lengths of the sourcelines SLXj (j=1 to m, X=A and B) are different, the difference betweenpath layout patterns corresponding to any adjacent source lines arerelatively small, and the lengths of the adjacent source lines will notbe significantly different from each other. Thus, no significantdifference in the charging rate occurs between the adjacent source lineswhen they are driven. As a result, in a display device in which thelayout pattern of the demultiplexer circuit is configured to be thediagonal position configuration in order to correspond to a narrow pixelpitch, occurrence of the striped unevenness as illustrated in FIG. 7 issuppressed, and in a case where each source line is driven so that theentire screen is displayed in the same gray scale, a display asillustrated in FIG. 8 (luminance distribution) is obtained, and thestriped unevenness is not visually recognized.

3. Third Embodiment

Next, liquid crystal display device employing the SSD method(hereinafter referred to as “display device of a third embodiment”)including an active matrix substrate 100 according to the thirdembodiment will be described. The overall configuration of the displaydevice according to the third embodiment is substantially the same asthe display device of the second embodiment (see FIG. 11 and FIG. 12)except for the configuration of the demultiplexer circuit 40, and thesame reference signs are assigned to the same or correspondingcomponents and detailed descriptions of those components will beomitted.

FIG. 15 is a circuit diagram illustrating a configuration of thedemultiplexer circuit 40 in the active matrix substrate 100 according tothe present embodiment along with an electrical configuration of thedisplay portion 101. As illustrated in FIG. 15, in the presentembodiment as well, similar to the above-described second embodiment(FIG. 11), each demultiplexer 41 j in the demultiplexer circuit 40includes two switching elements, and is configured to demultiplex themultiplexed data signal Doj that is time-division multiplexed with amultiplicity of two. However, while the switching elements included ineach demultiplexer 41 j in the second embodiment are realized byN-channel transistors, each switching element included in eachdemultiplexers 41 j in the present embodiment is realized as a circuit,in which an N-channel transistor and a P-channel transistor areconnected in parallel with each other. in other words, as a CMOStransmission gate. In other words, in each demultiplexer 41 j accordingto the above-described second embodiment, two switching elements arerespectively realized by the N-channel transistors MA1 and MB1, whereasin each demultiplexer 41 j according to the present embodiment, the twoswitching elements are realized by a first CMOS transmission gateconstituted by an N-channel transistor NAj and a P-channel transistorPAj connected in parallel with each other and a second CMOS transmissiongate constituted by an N-channel transistor NBj and a P-channeltransistor PBj connected in parallel with each other (j=1 to m).

As a signal for controlling each demultiplexer 41 j, a demultiplexingcontrol signal Ssw constituted by control signals ASWA, ASWB, ASWA_B,and ASWB_B as illustrated in FIG. 16 (hereinafter, in a case where thesecontrol signals are distinguished from each other, respectively referredto as “A control signal ASWA”, “B control signal ASWB”, “A inversioncontrol signal ASWA_B”, and “B inversion control signal ASWB_B”) isgenerated by the display control circuit 20. Here, the A inversioncontrol signal ASWA_B and the B inversion control signal ASWB_B arelogical inversion signals of the A control signal ASWA and the B controlsignal ASWB, respectively. As illustrated in FIG. 15, in eachdemultiplexer 41 j, gate terminals of an N-channel transistor NAj and aP-channel transistor PAj constituting the first CMOS transmission gateare supplied with the A control signal ASWA and the A inversion controlsignal ASWA_B, respectively, and gate terminals of an N-channeltransistor NBj and a P-channel transistor PBj constituting the secondCMOS transmission gate are supplied with the B control signal ASWB andthe B inversion control signal ASWB_B. respectively.

The display device according to the present embodiment in which thedemultiplexers 411 to 41 m described above are used also operatessimilarly to the display device according to the second embodiment.However, since each switching element included in each demultiplexer 41j is realized by the CMOS transmission gate in the present embodiment,the on resistance Ron of the switching element is smaller than the onresistance Ron of each switching element included in each demultiplexer41 j in the second embodiment. As a result, compared to the secondembodiment, the difference in the charging rate between adjacent sourcelines is reduced (see FIG. 5), and the defect on the display (occurrenceof the striped unevenness) as illustrated in FIG. 7 is alleviated.

FIG. 17 is a layout diagram for describing a layout pattern of thedemultiplexer circuit 40 in a known active matrix display deviceemploying the SSD method (hereinafter referred to as “third knownexample”) including a configuration similar to those described above. Inthe third known example as well, m demultiplexers 411 to 41 m in thedemultiplexer circuit 40 are grouped with adjacent three demultiplexersas one set. In the third known example, as illustrated in FIG. 15, eachdemultiplexer 41 j includes four connection control transistors NAj,PAj, NBj, and PBj constituting the first and the second COS transmissiongates, and thus twelve connection control transistors are included inone set constituted by the three demultiplexers. As illustrated in FIG.17, the twelve connection control transistors are arranged to be alignedin the extending direction of the source line with the four transistorsincluded in the one demultiplexer as a unit while positions of thetwelve connection control transistors are sequentially shifted in thevertical direction with respect to the source line. Here, the layoutpattern of each demultiplexers 41 j is configured such that twoN-channel transistors NAj and NBj and two P-channel transistors PAj andPBj are aligned in the extending direction of the source line whilepositions of the two N-channel transistors NAj and NBj and two P-channeltransistors PAj and PBj are shifted in the vertical direction withrespect to the source line, and in each demultiplexer 41 j, a directionin which the two P-channel transistors PAj and PBj are shifted in thevertical direction of the source line with respect to the two N-channeltransistors NAj and NBj and a direction in which the twelve connectioncontrol transistors in one set are sequentially shifted in position inthe vertical direction with respect to the source line with fourconnection control transistors included in one demultiplexer as one unitare opposite to each other.

In FIG. 17, when attention is paid to the layout pattern (path layoutpattern) of the path in the demultiplexer circuit supplying the datasignal DXj to each source line SLXj (j=1 to m, X=R and B), thedifference between the path layout patterns is relatively small foradjacent source lines in the same set. However, similar to theabove-described second known example (FIG. 13), in a case where ademultiplexer to which one of the adjacent source lines is connected anda demultiplexer to which the other is connected are included indifferent sets, as in the (j+2)-th B source line SLBj+2 and the (j+3)-thA source line SLAj+3, path layout patterns for the adjacent source linesare significantly different, and the length of one source line (SLBj+2)and the length of the other source line (SLAj+3) are also significantlydifferent. As a result, significant difference occurs between thecharging rate when the one source line (SLBj+2) is charged with avoltage of the data signal DBj+2 supplied thereto and the charging ratewhen the other source line (SLRj+3) is charged with a voltage of thedata signal DRj+3 supplied thereto. Thus, in the third known example aswell, even if each source line is driven so that the entire screen isdisplayed in the same gray scale, the striped unevenness as illustratedin FIG. 7 may be visually recognized.

In contrast, in the present embodiment, a layout pattern as illustratedin FIG. 7 is employed for the demultiplexer circuit 40 in order tosuppress the occurrence of the striped unevenness as illustrated in FIG.18. In other words, similar to the above-described third known example,twelve connection control transistors in one set are arranged to bealigned in the extending direction of the source line with fourtransistors included in one demultiplexer as a unit while positions ofthe twelve transistors are sequentially shifted in the verticaldirection with respect to the source line (see FIG. 17). However, unlikethe third known example, in any two adjacent sets, a direction in whichtwelve transistors included in the three demultiplexers in one set areshifted in the vertical direction with respect to the source line withthe four transistors as a unit and a direction in which twelvetransistors included in the three demultiplexers in the other set areshifted in the vertical direction with respect to the source line withthe four transistors as a unit are opposite to each other. In otherwords, the layout pattern of the demultiplexer circuit 40 is, similar tothe first and second embodiments (FIG. 6 and FIG. 14), configured to bethe diagonal arrangement configuration in which the shift direction isalternately reversed for each set.

According to the present embodiment, although the lengths of the sourcelines SLXj (j=1 to m, X=A and B) are different, similar to the first andsecond embodiments, the difference between path layout patternscorresponding to any adjacent source lines are relatively small, and thelengths of the adjacent source lines will not be significantly differentfrom each other. Thus, no significant difference in the charging rateoccurs between the adjacent source lines when they are driven. As aresult, in a display device in which the layout pattern of thedemultiplexer circuit is configured to be the diagonal positionconfiguration in order to correspond to a narrow pixel pitch, occurrenceof the striped unevenness as illustrated in FIG. 7 is suppressed, and ina case where each source line is driven so that the entire screen isdisplayed in the same gray scale, a display as illustrated in FIG. 8(luminance distribution) is obtained, and the striped unevenness is notvisually recognized.

In the above-described third embodiment, each demultiplexer 41 jincludes two CMOS transmission gates, as illustrated in FIG. 19A, andthe two CMOS transmission gates are realized using two N-channeltransistors NAj and NBj and two P-channel transistors PAj and PBj. Asillustrated in FIG. 18 or FIG. 19B, the layout pattern of eachdemultiplexer 41 j can be configured such that two P-channel transistorsPAj and PBj and two N-channel transistors NAj and NBj are aligned in theextending direction of the source line while positions of the twoP-channel transistors PAj and PBj and two N-channel transistors NAj andNBj are shifted in the vertical direction with respect to the sourceline, but the present disclosure is not limited to such an arrangementconfiguration. For example, the two N-channel transistors NAj and NBjand the two P-channel transistors PAj and PBj in each demultiplexer 41 jmay be arranged in the vertical direction with respect to the sourceline as illustrated in FIG. 19C. The same applies to the fourthembodiment described below (see FIG. 23) using a CMOS transmission gateas the switching element in the demultiplexer circuit 40.

4. Fourth Embodiment

Next, a liquid crystal display device employing the SSD method(hereinafter referred to as “display device of a fourth embodiment”)including an active matrix substrate 100 according to the fourthembodiment will be described. The overall configuration of the displaydevice according to the fourth embodiment is substantially the same asthe display device of the third embodiment (see FIG. 15) except for theconfiguration of the demultiplexer circuit 40, and the same referencesigns are assigned to the same or corresponding components andillustrations and detailed descriptions of those components will beomitted.

FIG. 20 is a circuit diagram illustrating a configuration of thedemultiplexer circuit 40 in the active matrix substrate 100 according tothe present embodiment. As illustrated in FIG. 20, in the presentembodiment as well, similar to the third embodiment (FIG. 15), eachdemultiplexer 41 j in the demultiplexer circuit 40 is realized by afirst CMOS transmission gate constituted by an N-channel transistor NAjand a P-channel transistor PAj connected in parallel with each other anda second CMOS transmission gate constituted by an N-channel transistorNBj and a P-channel transistor PBj connected in parallel with each other(j=1 to m).

In the present embodiment, the configuration of the signal lines fortransmitting the four types of control signals corresponding to thecontrol signals ASWA, ASWB, ASWA_B and ASWB_B in the above-describedthird embodiment as the demultiplexing control signal Ssw to eachdemultiplexer 41 j (j=1 to m) in the demultiplexer circuit 40 isdifferent from the configuration in the third embodiment. In otherwords, in the above-described third embodiment, as illustrated in FIG.15, four control signal lines for transmitting the A control signalASWA, the B control signal ASWB, the A inversion control signal ASWA_B,and the B inversion control signal ASWB_B as the demultiplexing controlsignal Ssw to each demultiplexer 41 j are provided in the demultiplexercircuit 40. In contrast, in the present embodiment, as illustrated inFIG. 20, eight control signal lines for transmitting the first A controlsignal ASW1A, the second A control signal ASW2A, the first B controlsignal ASW1B, the second B control signal ASW2B, the first A inversioncontrol signal ASW1A_B, the second A inversion control signal ASW2A_B,the first B inversion control signal ASW1B_B, and the second B inversioncontrol signal ASW2B_B as the demultiplexing control signal Ssw areprovided in the demultiplexer circuit 40.

FIG. 21 is a timing chart for describing operations of the demultiplexercircuit 40 in the present embodiment. As illustrated in FIG. 21,multiplexed data signals Do1 to Dom as video signals supplied to inputterminals Td1 to Tdm corresponding to demultiplexers 411 to 41 m,respectively, of the demultiplexer circuit 40 from the source driver 30in the present embodiment are the same as the multiplexed data signalsDo1 to Dom in the second and the third embodiments (see FIG. 12 and FIG.16).

As illustrated in FIG. 21, in the demultiplexing control signal Sswsupplied to the demultiplexer circuit 40 in the present embodiment, thefirst and second A control signals ASW1A and ASW2A are the same signalsas the A control signal ASWA in the third embodiment, the first andsecond B control signals ASW1B and ASW2B are the same signals as the Bcontrol signal ASWB in the third embodiment, the first and second Ainversion control signals ASW1A_B and ASW2A_B are the same signals asthe A inversion control signal ASWA_B in the third embodiment, and thefirst and second B inversion control signals ASW1B_B and ASW2B_B are thesame signals as the B inversion control signal ASWB_B in the thirdembodiment (see FIG. 16). The first and second A control signals ASW1Aand ASW2A, the first and second B control signals ASW1B and ASW2B, thefirst and second A inversion control signals ASW1A_B and ASW2A_B, andthe first and second B inversion control signals ASW1B_B and ASW2B_B aregenerated by the display control circuit 20 and are supplied to thedemultiplexer circuit 40 as the demultiplexing control signal Ssw.

As described above, in the demultiplexer circuit 40, eight controlsignal lines (hereinafter the eight control signal lines are referred toas “first A control signal line CL1A”, “second A control signal lineCL2A”, “first B control signal line CL1B”, “second B control signal lineCL2B”, “first A inversion control signal line CL1A_B”, “second Ainversion control signal line CL2A_B”, “first B inversion control signalline CL1B_B”, and “second B inversion control signal line CL2B_B”) fortransmitting the first A control signal ASW1A, the second A controlsignal ASW2A, the first B control signal ASW1B, the second B controlsignal ASW2B, the first A inversion control signal ASW1A_B, the second Ainversion control signal ASW2A_B, the first B inversion control signalASW1B_B, and the second B inversion control signal ASW2B_B,respectively, are arranged. Hereinafter, the first A control signal lineCL1A, the first B control signal line CL1B, the first A inversioncontrol signal line CL1A_B, and the first B inversion control signalline CL1B_B are referred to as “control signal lines of the firststage”, and the second A control signal line CL2A, the second B controlsignal line CL2B, the second A inversion control signal line CL2A_B, andthe second B inversion control signal line CL2B_B are referred to as“control signal lines of the second stage”.

In the demultiplexer circuit 40 according to the present embodiment,among the m demultiplexers 411 to 41 m, m/2 demultiplexers are connectedto the control signal lines of the first stage, and the other m/2demultiplexers are connected to the control signal lines of the secondstage (m is an even number). In the configuration example illustrated inFIG. 20, the connection to the control signal lines of the first stageand the connection to the control signal lines of the second stage areswitched alternately for every three demultiplexers. Thus, for example,in each of the first to third demultiplexers 411 to 413, the first Acontrol signal line CL1A and the first A inversion control signal lineCL1A_B are connected to the gate terminals of the N-channel transistorNAj and the P-channel transistor PAj, respectively, in the first CMOStransmission gate, the first B control signal line CL1B and the first Binversion control signal line CL1B_B are connected to the gate terminalsof the N-channel transistor NBj and the P-channel transistor PBj,respectively, in the second CMOS transmission gate (j=1 to 3), and forexample, in each of the fourth to sixth demultiplexers 414 to 416, thesecond A control signal line CL2A and the second A inversion controlsignal line CL2A_B are connected to the gate terminals of the N-channeltransistor NAj and the P-channel transistor PAj, respectively, in thefirst CMOS transmission gate, the second B control signal line CL2B andthe second B inversion control signal line CL2B_B are connected to thegate terminals of the N-channel transistors NBj and P-channel transistorPBj, respectively, in the second CMOS transmission gate (j=4 to 6).

With such a configuration (hereinafter referred to as “SSDdouble-driving configuration”), in the present embodiment, each twocontrol signal lines is provided for transmitting each of four types ofcontrol signals (ASW1A and ASW2A), (ASW1B and ASW2B), (ASW1A_B andASW2A_B), and (ASW1B_B and ASW2B_B) corresponding to control signalsASWA, ASWB, ASWA_B, and ASWB_B as the demultiplexing control signal Sswin the third embodiment.

FIG. 22 is a layout diagram for describing a layout pattern of thedemultiplexer circuit 40 in a known active matrix display deviceemploying the SSD method (hereinafter referred to as “fourth knownexample”) including a configuration similar to those described above. Asillustrated in FIG. 22, eight control signal lines including the first Acontrol signal line CL1A, the second A control signal line CL2A, thefirst B control signal line CL1B, the second B control signal line CL2B,the first A inversion control signal line CL1A_B, the second A inversioncontrol signal line CL2A_B, the first B inversion control signal lineCL1B_B, and the second B inversion control signal line CL2B_B fortransmitting control signals ASW1A, ASW2A, ASW1B, ASW2B, ASW1A_B,ASW2A_B, ASW1B_B, and ASW2B_B, respectively, as the demultiplexingcontrol signal Ssw are arranged.

In the fourth known example, m demultiplexers 411 to 41 m in thedemultiplexer circuit 40 are grouped with adjacent three demultiplexersas one set, and as can be seen by comparing FIG. 22 with FIG. 17, thelayout pattern of the demultiplexer circuit 40 in the fourth knownexample is the same as the layout pattern of the demultiplexer circuit40 in the above-described third known example except for the layoutpatterns associated with the above-described control signal lines CL1A,CL2A, CL1B, CL2B, CL1A_B, CL2A_B, CL1B_B, and CL2B_B. Thus, asillustrated in FIG. 22, similar to the above-described third knownexample (FIG. 17), in a case where a demultiplexer to which one of theadjacent source lines is connected and a demultiplexer to which theother is connected are included in different sets, as in the (j+2)-th Bsource line SLBj+2 and the (j+3)-th A source line SLAj+3, path layoutpatterns for the adjacent source lines are significantly different, andthe length of the one source line (SLBj+2) and the length of the othersource line (SLAj+3) are also significantly different. As a result,significant difference occurs between the charging rate when the onesource line (SLBj+2) is charged with a voltage of the data signal DBj+2supplied thereto and the charging rate when the other source line(SLRj+3) is charged with a voltage of the data signal DRj+3 suppliedthereto. Thus, in the fourth known example as well, similar to theabove-described third known example, even if each source line is drivenso that the entire screen is displayed in the same gray scale, thestriped unevenness as illustrated in FIG. 7 may be visually recognized.

In contrast, in the present embodiment, in order to suppress theoccurrence of the striped unevenness as illustrated in FIG. 7, thelayout pattern of the demultiplexer circuit 40 is, similar to the thirdembodiment (FIG. 18), configured to be the diagonal arrangementconfiguration in which the shift direction is alternately reversed foreach set. In other words, in the present embodiment, a layout pattern asillustrated in FIG. 23 is employed for the demultiplexer circuit 40, andin any two adjacent sets, a direction in which twelve transistorsincluded in the three demultiplexers in one set are shifted in thevertical direction with respect to the source line with the fourtransistors (two CMOS transmission gates) in one demultiplexer as aunit, and a direction in which twelve transistors included in the threedemultiplexers in the other set are shifted in the vertical directionwith respect to the source line with the four transistors (two CMOStransmission gates) in one demultiplexer as a unit are opposite to eachother.

According to the present embodiment, although the lengths of the sourcelines SLXj (j=1 to m, X=A and B) are different, similar to the first tothird embodiments (FIG. 6, FIG. 14, and FIG. 18), the difference betweenpath layout patterns corresponding to any adjacent source lines arerelatively small, and the lengths of the adjacent source lines will notbe significantly different from each other. Thus, no significantdifference in the charging rate occurs between the adjacent source lineswhen they are driven. As a result, in a display device in which thelayout pattern of the demultiplexer circuit is configured to be thediagonal position configuration in order to correspond to a narrow pixelpitch, occurrence of the striped unevenness as illustrated in FIG. 7 issuppressed, and in a case where each source line is driven so that theentire screen is displayed in the same gray scale, a display asillustrated in FIG. 8 (luminance distribution) is obtained, and thestriped unevenness is not visually recognized.

Additionally, in the present embodiment, as described above, since theconfiguration (SSD double-driving configuration) in which each twocontrol signal lines is provided for transmitting each of four types ofcontrol signals corresponding to control signals ASWA, ASWB, ASWA_B, andASWB_B as the demultiplexing control signal Ssw in the third embodimentis employed (see FIG. 20), as illustrated in FIG. 24, the load per onecontrol signal line is ½ compared to the third embodiment, and thewaveform dullness of the control signals ASW1A, ASW2A, ASW1B, ASW2B,ASW1A_B, ASW2A_B, ASW1B_B, and ASW2B_B becomes smaller. Note that FIG.24 illustrates a waveform of a voltage Vin_asw of a control signal ASWkX(k=1 or 2, X=A or B) of any of the control signals ASW1A, ASW2A, ASW1B,and ASW2B at the input end of the demultiplexer circuit 40, and awaveform of a voltage Vasw of the control signal ASWkX when the controlsignal ASWkX is supplied to the gate terminal of either the transistorNAj or the NBj in the demultiplexer circuit 40. As can be seen in FIG.24, according to the present embodiment in which such an SSDdouble-driving configuration is employed, compared to the configuration(hereinafter referred to as “SSD single-driving configuration”) in whicheach one control signal line is provided for transmitting each ofabove-described control signals ASWA, ASWB, ASWA_B, and ASWB_B in thethird embodiment (see FIG. 15), the waveform dullness of the voltageVasw of the control signal supplied to the gate terminals of eachtransistor in the demultiplexer circuit 40 is reduced, and the on-periodof the transistor becomes longer. As a result, the time for chargingeach source line with the multiplexed data signal Doj as the videosignal can be sufficiently ensured, and the charging rate is improved.Thus, in the present embodiment, such an SSD double-drivingconfiguration also contributes to suppression of the striped unevennessas illustrated in FIG. 7.

Note that, although in the present embodiment, although theconfiguration in which each two control signal lines is provided fortransmitting each of a plurality of types of control signals (in theabove-described third embodiment, four types of control signals ASWA,ASWB, ASWA_B, and ASWB_B) for constituting the demultiplexing controlsignal Ssw, in other words, the SSD double-driving configuration isemployed (FIG. 20), instead of this, a configuration in which apredetermined number of three or more control signal lines are providedfor transmitting each of the plurality of types of control signals maybe employed. In other words, by employing a configuration in whichcontrol signal lines having a number of two or more times the number ofcontrol signals required for each demultiplexer 41 j (connection controltransistors included therein) are arranged in the demultiplexer circuit40, the load per one control signal line for transmitting the pluralityof types of control signals constituting the demultiplexing controlsignal Ssw is reduced, and the same effect as in the present embodimentcan be obtained.

In the present embodiment as well, similar to the first to thirdembodiments, m demultiplexers 411 to 41 m in the demultiplexer circuit40 are grouped with adjacent plurality of demultiplexers as one set, thetransistors included in each set are arranged to be aligned in theextending direction of the source line with a predetermined number oftransistors as a unit while positions of the transistors included ineach set are sequentially shifted in the vertical direction with respectto the source line, and in any two adjacent sets, a direction in whichpositions of the transistors included in one set are shifted in thevertical direction with respect to the source line with thepredetermined number of transistors as the unit and a direction in whichpositions of the transistors included in another set are shifted in thevertical direction with respect to the source line with thepredetermined number of transistors as the unit are opposite to eachother. In other words, the diagonal arrangement configuration ofalternately reversing shift direction is employed for the layout patternof the demultiplexer circuit 40. Here, a set in which transistors arearranged to be shifted in the vertical direction with respect to thesource line in the same direction as the direction in which thetransistors included in the one set are shifted in the verticaldirection with respect to the source line with the predetermined numberof transistors included in the one set as the unit is referred to as “aportion”, and a set in which transistors are arranged to be shifted inthe vertical direction with respect to the source line in the samedirection as the direction in which the transistors included in theother set are shifted in the vertical direction with respect to thesource line with the predetermined number of transistors included in theother set as the unit is referred to as “β portion”.

In the demultiplexer circuit 40 according to the present embodiment, ina case where only one of the control signal lines of the first stageCL1A, CL1B, CL1A_B, and CL1B_B, or the control signal lines of thesecond stage CL2A, CL2B, CL2A_B, and CL2B_B is connected to all of the aportions, and only the other one of the control signal lines of thefirst stage CL1A, CL1B, CL1A Band CL1B_B, or the control signal lines ofthe second stage CL2A, CL2B, CL2A_B, and CL2B_B is connected to all ofthe β portions, in a case where patterns are formed to be shifted in thevertical direction with respect to the source line between differentlayers during manufacturing of the active matrix substrate 100, adifference in load may occur between the control signal lines connectedto the a portions and the control signal lines connected to the βportions. When such a difference in load occurs, a difference in thecharging rate may occur between the source lines connected to the aportions and the source lines connected to the β portions, and as aresult, the striped unevenness as illustrated in FIG. 7 may be visuallyrecognized in the display portion 101.

Accordingly, in order to suppress the occurrence of such stripedunevenness, it is preferable that the control signal lines of the firststage and the control signal lines of the second stage are evenlyconnected to the a portions included in the demultiplexer circuit 40,and the control signal lines of the first stage and the control signallines of the second stage are evenly connected to the β portionsincluded in the demultiplexer circuit 40. For example, it is preferablethat control signal lines of the first stage, control signal lines ofthe first stage, control signal lines of the second stage, and controlsignal lines of the second stage, . . . , are connected to sets of thedemultiplexers aligned in the order of an α portion, a β portion, an αportion, and a β portion, . . . , respectively, in the verticaldirection with respect to the source line as illustrated in FIG. 25, orcontrol signal lines of the first stage, control signal lines of thesecond stage, control signal lines of the second stage, and controlsignal lines of the first stage, . . . are connected as illustrated inFIG. 26. In this way, the control signal lines of the first stage areconnected to half of each of the α portions and the β portions includedin the demultiplexer circuit 40, and the control signal lines of thesecond stage are connected to the remaining half.

5. Fifth Embodiment

Next, a liquid crystal display device employing the SSD method(hereinafter referred to as “display device of a fifth embodiment”)including an active matrix substrate 100 according to the fifthembodiment will be described. The overall configuration of the displaydevice according to the fifth embodiment is the same as the displaydevice of the first embodiment (see FIG. 1 to FIG. 3), and the samereference signs are assigned to the same or corresponding components andillustrations. The demultiplexer circuit 40 according to the presentembodiment is similar to that of the above-described first embodimentfor the circuit configuration (see FIG. 2), but the layout pattern isdifferent from that of the first embodiment. In other respects in thepresent embodiment, the configuration is similar to that of theabove-described first embodiment, and thus the description thereof willbe omitted.

As described above, in the layout pattern of the demultiplexer circuitaccording to the first embodiment, m demultiplexers 411 to 41 m in thedemultiplexer circuit 40 are grouped with adjacent three demultiplexersas one set, the nine transistors included in each set are arranged to bealigned in the extending direction of the source line with threetransistors as a unit while positions of the nine transistors includedin each set are sequentially shifted in the vertical direction withrespect to the source line, and in any two adjacent sets, a direction inwhich the transistors included in one set is shifted in the verticaldirection with respect to the source line with the three transistorsincluded in one set as a unit and a direction in which the transistorsincluded in another set is shifted in the vertical direction withrespect to the source line with the three transistors included inanother set as a unit are opposite to each other (FIG. 6). Here, similarto the fourth embodiment, a set in which transistors are arranged to beshifted in the vertical direction with respect to the source line in thesame direction as the direction in which the transistors included in theone set are shifted in the vertical direction with respect to the sourceline with the three transistors included in the one set as the unit isreferred to as “α portion”, and a set in which transistors are arrangedto be shifted in the vertical direction with respect to the source linein the same direction as the direction in which the transistors includedin the other set are shifted in the vertical direction with respect tothe source line with the three transistors included in the other set asthe unit is referred to as “β portion”.

In the layout illustrated in FIG. 6 in the first embodiment, threetransistors MRk, MGk, and MBk (k=1 to m) as a unit are arranged in thevertical direction (the left and right direction in the drawing) withrespect to the source line, the positional relationship between the gateand the drain (whether the drain is on the right side or the left sideof the gate) in the vertical direction (the left and right direction inthe drawing) with respect to the source line in each of the threetransistors is opposite to each other in the α portion and R portion forthe G connection control transistor MGk. Here, among the conductionterminals of each transistor, a terminal connected to a source line isreferred to as “drain”, and a terminal connected to a video signal line(signal line connecting the output terminals To1 to Tom of the sourcedriver 30 and the input terminals Td1 to Tdm of the demultiplexercircuit 40, respectively) is referred to as “source” (The same appliesto the following). As illustrated in FIG. 6, in the G connection controltransistor (the transistor connected to the G control signal ASWG) inthe α portion, the drain is arranged on the right side of the gate, butin the G connection control transistor in the β portion, the drain isarranged on the left side of the gate. Note that the positionalrelationship between the gate and the drain in the R connection controltransistor (the transistor connected to the R control signal ASWR) andthe B connection control transistor (the transistor connected to the Bcontrol signal ASWB) is the same.

FIG. 27 is a layout diagram for describing a layout pattern of thedemultiplexer circuit 40 in the present embodiment. As illustrated inFIG. 27, the layout pattern of the demultiplexer circuit 40 according tothe present embodiment is basically the same as that of the firstembodiment (FIG. 6), and m demultiplexers 411 to 41 m in thedemultiplexer circuit 40 are grouped with adjacent three demultiplexersas one set, and nine transistors included in each set are arranged to bealigned in the extending direction of the source line with the threetransistors as a unit while positions of the nine transistors includedin each set are sequentially shifted in the vertical direction withrespect to the source line. However, in the present embodiment, thepositional relationship between the gate and the drain in the verticaldirection (the left and right direction in the drawing) with respect tothe source line in each of the three transistors MRk, MGk, and MBk asthe unit is the same between the α portion and the β portion for each ofthe three transistors MRk, MGk, and MBk. In other words, as illustratedin FIG. 27, the source is shared by the R connection control transistorMRk and the G connection control transistor MGk in both the α portionand the β portion, among the three transistors MRk, MGk, and MBk, forthe R connection control transistor MRk, the drain is arranged on theleft side (in the drawing) of the gate, and

for the G connection control transistor MGk and the B connection controltransistor MBk, the drain is arranged on the right side (in the drawing)of the gate in both the α portion and the β portion.

FIG. 28 is a diagram for describing a relationship between a layoutpattern of a transistor as a switching element in a demultiplexercircuit and a feed-through voltage. Now, consider the case that, in acase of manufacturing the active matrix substrate 100, the gate metal isformed to be shifted to the left side (in the drawing) with respect tothe source metal. In this case, in a transistor Mα in which the drain Dis arranged on the right side (in the drawing) of the gate G, theparasitic capacitance Cgd between the gate and the drain is smaller thanthe original value (value in a case where there is no pattern shiftduring manufacturing), and in a transistor Mβ in which the drain D isarranged on the left side (in the drawing) of the gate G, the parasiticcapacitance Cgd between the gate and drain is greater than the originalvalue. As a result, the feed-through voltage (absolute value), in otherwords, the voltage ΔV given by the following Equation, generated whenthe transistor in the demultiplexer circuit 40 changes from the on stateto the off state, is smaller than the original value for the transistorMα illustrated in FIG. 28, and is greater than the original value forthe transistor Mβ illustrated in FIG. 28.

ΔV={Cgd/(Cgd+Csl)}|VGon−VGoff|  (1)

Where, Csl is the wiring line capacitance of a source line connected toa transistor changing from an on state to an off state and Csl=Csld+C2,Csld is the wiring line capacitance of α portion of the display portion101 in the source line, C2 is the wiring line capacitance of a portionof the demultiplexer circuit 40 in the source line, VGon is a voltagesupplied to the gate terminal of the transistor when the transistor isturned on, and VGoff is the voltage supplied to the gate terminal of thetransistor when the transistor is turned off.

In the above-described first embodiment, the G connection controltransistor MGk in the α portion corresponds to the transistor Mαillustrated in FIG. 28, and the G connection control transistor MGk inthe β portion corresponds to the transistor Mβ illustrated in FIG. 28(see FIG. 6). As a result, even if each source line is driven so thatthe entire screen is displayed in the same gray scale, the blockseparation as illustrated in FIG. 30 may be visually recognized. Such ablock separation is a phenomenon that may occur in a case where themultiplicity of the multiplexed data signal Doj (j=1 to m) input fromthe source driver 30 to the demultiplexer circuit 40 is an odd number.Thus, in this case, as in the present embodiment, it is preferable thatthe positional relationship between the drain D and the gate G (whetherleft side or right side in the drawing) is aligned in correspondingtransistor (a connection control transistor corresponding to the samecolor among R, G, and B) in the α portion and the β portion.

FIG. 29 is a diagram for describing a layout pattern for suppressing afeed-through voltage at a transistor as a switching element in ademultiplexer circuit. Here, consider the case that, in a case ofmanufacturing the active matrix substrate 100, the gate metal is formedto be shifted to the left side (in the drawing) with respect to thesource metal. In this case, since the drain D is arranged on the rightside (in the drawing) of the gate G in both the two transistors Mα andMβ illustrated in FIG. 29, the parasitic capacitance Cgd between thegate and the drain becomes smaller than the original value, and as aresult, the feed-through voltage (absolute value), in other words thevoltage ΔV given by the above-described Equation (1), generated in acase where the transistor in the demultiplexer circuit 40 changes fromthe on state to the off state becomes smaller than the original value.In the present embodiment, the G connection control transistor MGk inthe a portion corresponds to the transistor Mα illustrated in FIG. 29,and the G connection control transistor MGk in the β portion correspondsto the transistor Mβ illustrated in FIG. 29 (see FIG. 27). In this way,if the positional relationship between the drain D and the gate G(whether left side or right side in the drawing) is the same in thecorresponding transistor (a connection control transistor correspondingto the same color among R, G, and B) in the α portion and the β portion.in other words, if the drain D is arranged on the same side with respectto the gate G, even if the gate metal is formed to be shifted withrespect to the source metal due to a variation in manufacturing of theactive matrix substrate 100, in a case where each source line is drivenso that the entire screen is displayed in the same gray scale, the blockseparation does not occur, and uniform gray scale display as illustratedin FIG. 31 is obtained.

6. Sixth Embodiment

The first to fifth embodiments have characteristics in the layoutpattern of the demultiplexer circuit in the liquid crystal displaydevice employing the SSD method (see FIG. 6, FIG. 14, FIG. 18, FIG. 23,and FIG. 27), and a layout pattern having similar characteristics can beemployed for the video inspection circuit in the active matrix substrateof the liquid crystal display device as described below. An activematrix substrate including such a video inspection circuit will bedescribed below as a sixth embodiment. Note that the active matrixsubstrate according to the present embodiment has the same configurationas that of the active matrix substrate according to the first embodiment(see FIG. 2) except that the video inspection circuit 60 is provided,and the same reference numerals are used for the same or correspondingportions, and detailed descriptions thereof will be omitted.

FIG. 32 is a circuit diagram for describing a video inspection circuit60 in the active matrix substrate according to the present embodiment.As illustrated in FIG. 32, in the active matrix substrate according tothe present embodiment, the video inspection circuit 60 is provided onthe opposite side of the demultiplexer circuit 40 with respect to thedisplay portion 101, and the video inspection circuit 60 is connected toan end portion opposite to an end portion to which the demultiplexercircuit 40 is connected among 3 m source lines SLR1 SLG1, and SLB1 toSLRm, SLGm, and SLBm. The video inspection circuit 60 includes 3 mconnection control transistors TR1, TG1, and TB1 to TRm, TGm, and TBm asswitching elements connected to 3 m source lines SLR1, SLG1, and SLB1 toSLRm, SLGm, and SLBm, respectively, two inspection video signal linesfor respectively transmitting inspection video signals VTAin and VTBinsupplied from the outside, and three inspection control signal lines fortransmitting inspection control signals TSWR, TSWG, and TSWB,respectively, for controlling the on/off of the 3 m connection controltransistors TR1, TG1, and TB1 to TRm, TGm, and TBm. Each source lineSLXj (j=1 to m, X=R, G, and B) in the display portion 101 is connectedto any of the two inspection video signal lines via a correspondingconnection control transistor TXj, and the gate terminal of eachconnection control transistor TXj is connected to the inspection controlsignal line transmitting the inspection control signal TSWX. The 3 mconnection control transistors TR1, TG1, and TB1 to TRm, TGm, and TBm inthe video inspection circuit 60 are grouped into m groups of connectioncontrol transistor groups with three connection control transistors TRj,TGj, and TBj, in which the inspection control signals TSWR, TSWG, andTSWB are respectively supplied to the gate terminals by the threeinspection control signal lines and arranged adjacent to each other, asone group. Note that in the example illustrated in FIG. 32, although thetwo inspection video signal lines are provided in the video inspectioncircuit 60, one or three or more inspection video signal lines may beprovided, and the appropriate number of signal lines is determinedaccording to the shape specifications and inspection content of thedisplay panel including the active matrix substrate according to thepresent embodiment.

The video inspection circuit 60 configured as described above receivesinspection display data according to the inspection content asinspection video signals VTAin and VTBin (these video signals aretime-division multiplexed inspection data signals to be applied todifferent source lines as necessary), and supplies the inspection videosignal VTAin or VTBin to each source line SLXj (j=1 to m, X=R, G, and B)via each connection control transistor TXj as the switching elementcontrolled by the inspection control signal TSWX. Accordingly, the videoinspection circuit 60 is common to the demultiplexer circuit 40 (FIG. 2,FIG. 11, FIG. 15, and the like) in the first to fifth embodiments inthat the video inspection circuit 60 includes the connection controltransistor as the switching element connected to each source line SLXj,and controls the supply of the data signal as the video signal to eachsource line SLXj by the connection control transistor, and thus thevideo inspection circuit 60 and the demultiplexer circuit 40 can beconsidered as a signal supply control circuit having similar functionsin a broader concept. Thus, in a case where the pixel pitch in thedisplay portion 101 is narrow, the diagonal arrangement configuration isalso employed in the layout pattern of the video inspection circuit 60.

FIG. 33 is a layout diagram for describing a layout pattern of the videoinspection circuit 60 in a known active matrix substrate (hereinafterreferred to as “fifth known example”) corresponding to the presentembodiment. In this layout pattern, m groups of the connection controltransistor group in the video inspection circuit 60 are grouped withthree connection control transistor groups as one set, and nine controltransistors included in the three groups of the connection controltransistor group in each set are arranged to be aligned in the extendingdirection of the source line with the three transistors in onetransistor group as a unit while positions of the nine controltransistors included in the three connection control transistor groupsin each set are sequentially shifted in the vertical direction withrespect to the source line (In FIG. 33, the three transistorsconstituting one transistor group are surrounded by a dotted line. Thesame applies to FIG. 34 described below).

In the layout pattern illustrated in FIG. 33, in a case where aconnection control transistor to which one of the adjacent source linesis connected and a connection control transistor to which the other isconnected are included in sets different from each other, as in the(j+2)-th B source line SLBj+2 and the (j+3)-th R source line SLRj+3,path layout patterns for the adjacent source lines are significantlydifferent, and the length of the one source line (SLBj+2) and the lengthof the other source line (SLRj+3) are also significantly different. As aresult, significant difference occurs between the charging rate when theone source line (SLBj+2) is charged with a voltage of the data signalDBj+2 supplied thereto and the charging rate when the other source line(SLRj+3) is charged with a voltage of the data signal DRj+3 suppliedthereto, and as a result, a display problem (such as the stripedunevenness in the display screen) similar to that of the first to fourthknown examples may occur.

In contrast, in the present embodiment, a layout pattern as illustratedin FIG. 34 is employed for the video inspection circuit 60 in order tosuppress the occurrence of the above-described display problem (such asthe striped unevenness). In other words, similar to the above-describedfifth known example, nine connection control transistors in one set arearranged to be aligned in the extending direction of the source linewith three transistors in one transistor group as a unit while positionsof the nine connection control transistors in one set are sequentiallyshifted in the vertical direction with respect to the source line.However, unlike the fifth known example, in any two adjacent sets, adirection in which nine connection control transistors in one set areshifted in the vertical direction with respect to the source line withthe three transistors as a unit and a direction in which nine connectioncontrol transistors in the other set are shifted in the verticaldirection with respect to the source line with the three transistors asa unit are opposite to each other. In other words, the layout pattern ofthe video inspection circuit 60 is, similar to the above-described firstembodiment (FIG. 6) and the like, configured to be the diagonalarrangement configuration in which the shift direction is alternatelyreversed for each set.

According to the present embodiment, although the lengths of the sourcelines SLXj (j=1 to m, X=R, G, and B) are different, similar to theabove-described first embodiment, the difference between path layoutpatterns corresponding to any adjacent source lines are relativelysmall, and the lengths of the adjacent source lines will not besignificantly different from each other. Thus, no significant differencein the charging rate occurs between the adjacent source lines when theinspection video signal VTAin or VTBin is supplied to the adjacentsource lines. As a result, in the active matrix substrate in which thelayout pattern of the video inspection circuit is configured to be thediagonal position configuration in order to correspond to a narrow pixelpitch, the occurrence of the display problem (such as the stripedunevenness) is suppressed, and the inspection display based on theinspection video signals VTAin and VTBin can be favorably performed.

Note that in the present embodiment, although the video inspectioncircuit 60 is arranged on the opposite side of the demultiplexer circuit40 with respect to the display portion 101 (FIG. 32), the videoinspection circuit 60 may be arranged on the same side as thedemultiplexer circuit 40. In the example illustrated in FIG. 32 and FIG.34, one set is constituted by the three groups of the connection controltransistor group, but one set may be constituted by two or four or moreconnection control transistor groups.

7. Modified Example and the Like

The present disclosure is not limited to the above-described embodimentdescribed above, and various modifications may be made without departingfrom the scope of the present disclosure.

For example, in the first to fifth embodiments, each demultiplexers 41 jis configured to demultiplex the multiplexed data signal Doj that istime-division multiplexed with a multiplicity of two or three (j=1 tom). However, the present disclosure may also be applied to an activematrix substrate including a demultiplexer 41 j configured todemultiplex a multiplexed data signal Doj that is time-divisionmultiplexed with a multiplicity of four or more.

In the above, the descriptions have been given with the liquid crystaldisplay device employing the SSD method using the active matrixsubstrate as an example. However, the present disclosure is not limitedthereto. The present disclosure can also be applied to display devicesother than the liquid crystal display device, for example, an organicelectro luminescence (EL) display device, as long as they are displaydevices of the SSD method.

In addition, the display device according to various modified examplescan be configured in any combination so long as the characteristics ofthe display device according to the embodiments described above and themodified example thereof are not adversely affected by the propertiesthereof.

In any of the first to sixth embodiments, the connection controltransistor as the switching element is connected to each source line inthe display portion 101, and the video signal to be supplied as the datasignal to each source line is supplied to the source line via theconnection control transistor connected thereto, so that wiring linecapacitance of the source line is charged. After the charging, thefeed-through voltage (absolute value) ΔV generated when the connectioncontrol transistor changes from the on state to the off state is givenby above-described Equation (1). According to the Equation (1), thefeed-through voltage ΔV varies depending on the wiring line capacitanceCsl of the source line, and the feed-through voltage ΔV decreases as thewiring line capacitance Csl of the source line increases. The wiringline capacitance Csl is the sum (Csld+C2) of a wiring line capacitanceCsld of a portion in the display portion 101 and a wiring linecapacitance C2 of a portion in the demultiplexer circuit 40 of thesource line (see FIG. 5). In a case where the connection controltransistor is an N-channel type and the source line is charged with anegative polarity data signal (video signal), and in a case where theconnection control transistor is P-channel type and the source line ischarged with a positive polarity data signal (video signal), thefeed-through voltage ΔV operates in the direction to increase thecharging rate of the source line. Thus, in these cases, in a case wherethe wiring line capacitance Csl increases due to the longer source line,not only the charging rate of the source line decrease due to anincrease in the charging current (increase in the voltage drop) flowingthrough the connection control transistor in the on state (on resistanceRon) as described above (see FIG. 5), but also the charging rate of thesource line decreases due to a decrease in the feed-through voltage(absolute value) ΔV. Accordingly, the above-described first to sixthembodiments (FIG. 6, FIG. 14, FIG. 18, FIG. 23, FIG. 27, and FIG. 34)employing the diagonal arrangement configuration of alternatelyreversing shift direction in the layout pattern of the demultiplexercircuit 40 and the video inspection circuit 60 are effective insuppressing the occurrence of the striped unevenness in the displayscreen from the point of reducing the difference in the feed-throughvoltage ΔV between adjacent source lines.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

1. An active matrix substrate comprising a display portion formed with aplurality of pixel circuits, the active matrix substrate comprising: aplurality of data signal lines configured to transmit a plurality ofvideo signals representing an image to be displayed on the displayportion to the plurality of pixel circuits; and a signal supply controlcircuit including a plurality of connection control switching elementsrespectively corresponding to the plurality of data signal lines andconfigured to supply each of the plurality of video signals to beapplied to each of the plurality of data signal lines to each of theplurality of data signal lines via corresponding each of the pluralityof connection control switching elements, wherein in the signal supplycontrol circuit, the plurality of connection control switching elementsis grouped into a plurality of sets of switching element group with twoor more switching elements as one set, the switching element group ofeach of the plurality of sets is arranged to be aligned in an extendingdirection of the plurality of data signal lines with a predeterminednumber of the switching elements as a unit while a position of theswitching element group of each of the plurality of sets is sequentiallyshifted in the vertical direction with respect to the plurality of datasignal lines, and in any two adjacent sets, a direction in which aposition of the switching element group of one set is shifted in thevertical direction with the predetermined number of switching elementsas the unit and a direction in which a position of the switching elementgroup of another set is shifted in the vertical direction with thepredetermined number of switching elements as the unit is opposite toeach other.
 2. The active matrix substrate according to claim 1, whereinthe signal supply control circuit is a demultiplexer circuit including aplurality of demultiplexers respectively corresponding to a plurality ofgroups of data signal lines obtained by grouping the plurality of datasignal lines with two or more data signal lines as one group andincluding a plurality of input terminals respectively corresponding tothe plurality of demultiplexers, the demultiplexer circuit receives, ateach of the plurality of input terminals, multiplexed data in which twoor more data signals that are video signals to be supplied to the two ormore data signal lines in a group corresponding to each of the pluralityof demultiplexers corresponding to each of the plurality of inputterminals is time-division multiplexed, each of the plurality ofdemultiplexers includes two or more connection control switchingelements respectively corresponding to the two or more data signal linesin the group corresponding to each of the plurality of demultiplexer,and is configured to supply two or more data signals obtained bydemultiplexing the multiplexed data signals to be supplied to the inputterminals corresponding to the demultiplexer by the two or moreconnection control switching elements to the two or more data signallines, respectively, in the demultiplexer circuit, the plurality ofdemultiplexers is grouped into a plurality of sets with a predeterminednumber of demultiplexers as one set, the connection control switchingelements included in the predetermined number of demultiplexers in eachof the plurality of sets are arranged to be aligned in an extendingdirection of the plurality of data signal lines with the predeterminednumber of switching elements as a unit while positions of the connectioncontrol switching elements included in the predetermined number ofdemultiplexers in each of the plurality of sets are sequentially shiftedin the vertical direction with respect to the plurality of data signallines, and in any two adjacent sets, a direction in which positions ofthe connection control switching elements included in the predeterminednumber of demultiplexers of one set are shifted in the verticaldirection with the predetermined number of switching elements as theunit and a direction in which positions of the connection controlswitching elements included in the predetermined number ofdemultiplexers of another set are shifted in the vertical direction withthe predetermined number of switching elements as the unit is oppositeto each other.
 3. The active matrix substrate according to claim 2,wherein in the demultiplexer circuit, the connection control switchingelements included in the predetermined number of the demultiplexers ofeach of the plurality of sets are arranged to be aligned in theextending direction of the plurality of data signal lines with theconnection control switching elements included in one demultiplexer as aunit while positions of the connection control switching elementsincluded in the predetermined number of the demultiplexers of each ofthe plurality of sets are sequentially shifted in the vertical directionwith respect to the plurality of data signal lines.
 4. The active matrixsubstrate according to claim 3, wherein each connection controlswitching element in each of the plurality of demultiplexers isconstituted by either only one of an N-channel transistor or a P-channeltransistor.
 5. The active matrix substrate according to claim 3, whereineach connection control switching element in each of the plurality ofdemultiplexers is constituted by an N-channel transistor and a P-channeltransistor connected in parallel with each other.
 6. The active matrixsubstrate according to claim 5, wherein the N-channel transistor and theP-channel transistor constituting each connection control switchingelement in each of the plurality of demultiplexers are arranged to bealigned in the extending direction of the plurality of data signallines.
 7. The active matrix substrate according to claim 5, wherein theN-channel transistor and the P-channel transistor constituting eachconnection control switching element in each of the plurality ofdemultiplexers are arranged to be aligned in the vertical direction withrespect to the plurality of data signal lines.
 8. The active matrixsubstrate according to claim 2, wherein in the demultiplexer circuit,two or more control signal lines are arranged as control signal linestransmitting a plurality of types of control signals required forcontrolling each connection control switching element included in eachof the plurality of demultiplexers to each of the plurality ofdemultiplexers, for each of the plurality of types of control signals.9. The active matrix substrate according to claim 8, wherein in thedemultiplexer circuit, a set in which the connection control switchingelements are arranged such that positions of the connection controlswitching elements included in the predetermined number ofdemultiplexers of the one set are shifted in the vertical direction inthe same direction as a direction in which the connection controlswitching elements are shifted in the vertical direction with thepredetermined number of switching elements as a unit is equallyconnected to the two or more control signal lines arranged for each ofthe plurality of types of control signals, and a set in which theconnection control switching elements are arranged such that positionsof the connection control switching elements included in thepredetermined number of demultiplexers of the other set are shifted inthe vertical direction in the same direction as a direction in which theconnection control switching elements are shifted in the verticaldirection with the predetermined number of switching elements as a unitis equally connected to the two or more control signal lines arrangedfor each of the plurality of types of control signals.
 10. The activematrix substrate according to claim 2, wherein the connection controlswitching elements included in each of the plurality of demultiplexersare thin film transistors, and in the demultiplexer circuit, for each ofthe connection control switching elements included in the predeterminednumber of demultiplexers of the one set, for a thin film transistor aseach of the switching elements and for a thin film transistor as each ofthe switching elements to which a control signal that is the same as orthe same type as a control signal supplied to each of the switchingelements in the one set among the connection control switching elementsincluded in the predetermined number of demultiplexers in another set issupplied, the drain is arranged on the same side with respect to thegate.
 11. The active matrix substrate according to claim 1, wherein theplurality of connection control switching elements respectivelycorresponding to the plurality of data signal lines is a thin filmtransistor.
 12. The active matrix substrate according to claim 1,wherein the signal supply control circuit is a video inspection circuitconfigured to control whether to supply any of one or more inspectionvideo signals supplied from outside to each of the plurality of datasignal lines and is configured to supply any of the inspection videosignals to each of the plurality of data signal lines via acorresponding connection control switching element.
 13. A display devicecomprising: the active matrix substrate according to claim 2; a dataside drive circuit configured to supply, as a multiplexed data signal, asignal in which two or more data signals respectively to be supplied tothe two or more data signal lines in the group corresponding to each ofthe plurality of input terminals is time-division multiplexed to each ofthe plurality of input terminals; and a demultiplexing control circuitconfigured to generate demultiplexing control signals to control eachconnection control switching element in each of the plurality ofdemultiplexers so that the two or more data signals respectively to besupplied to the two or more data signal lines in the group correspondingto each of the plurality of demultiplexers are generated bydemultiplexing the multiplexed data signal supplied to each of theplurality of input terminals from the data side drive circuit by each ofthe plurality of demultiplexers corresponding to each of the pluralityof input terminal.